- Mfr. #:
- CGHV50200F
- Description:
- RF JFET Transistors GaN HEMT 4.4-5.0GHz, 200 Watt
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CGHV50200F Information
- CGHV50200F GaN HEMT
- Wolfspeed CGHV50200F 200W GaN (Gallium-Nitride) HEMT (High-Electron-Mobility Transistor) is ideal for SatCom applications, such as troposcatter communications and Beyond Line-of-Site (BLOS). The CGHV50200F GaN HEMT is matched to 50Ω for ease of use. It is designed for Continuous Wave (CW), Pulse, and Linear modes of power amplifier operation. This device is supplied in a ceramic/metal flange type 440217 package.
Specifications
| RoHS: | Y |
|---|---|
| Subcategory: | Transistors |
| Series: | TGF |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Type: | RF JFET Transistors |
| Product Category: | RF JFET Transistors |
| Manufacturer: | Qorvo |
| Brand: | Qorvo |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Packaging: | Gel Pack |
| Technology: | GaN SiC |
| Application: | Defense and Aerospace, Broadband Wireless |
| Operating Frequency: | DC to 25 GHz |
| Id - Continuous Drain Current: | 80 mA |
| Pd - Power Dissipation: | 8.9 W |
| Output Power: | 7.2 W |
| Part # Aliases: | 1113799 |
| Factory Pack Quantity: | 50 |
| Gain: | 15 dB |
| NF - Noise Figure: | 1.3 dB |
| Minimum Operating Temperature: | - 40 C |
| Maximum Drain Gate Voltage: | - |
| Vgs - Gate-Source Breakdown Voltage: | - |
| Forward Transconductance - Min: | - |
| Vds - Drain-Source Breakdown Voltage: | - |
| Maximum Operating Temperature: | + 85 C |
CGHV50200F Price & Stock
Wolfspeed CGHV50200F pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | CGHV50200F-ND | 28 | 4548.41 | 4548.41 | 4548.41 | 4548.41 | 4548.41 | 2020-03-20T12:56:08Z |
| Richardson RFPD | CGHV50200F | - | - | - | 4649.38 | 4649.38 | 4649.38 | 2020-03-21T01:24:43Z |
AD5242BRUZ1M distributor
- Wolfspeed CGHV50200F 200W 4400-5000MHz 50Ω GaN ...
- Wolfspeed's CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency; high gain and wide ...
- CGHV50200F Wolfspeed / Cree | Mouser
- The CGHV50200F GaN HEMT is matched to 50Ω for ease of use. It is designed for Continuous Wave (CW), Pulse, and Linear modes of power amplifier operation.
- CGHV50200F-AMP Wolfspeed / Cree | Mouser
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- CGHV50200F - Wolfspeed, A Cree Company | RF Transistor
- The CGHV50200F from Wolfspeed is HEMT GaN Transistors that operates from 4.4 to 5 GHz. This transistor has a saturated output power of 180 watts (200 W ...
- CGHV50200F HEMT Datasheet pdf - GaN HEMT. Equivalent ...
- Cree CGHV50200F | HEMT. CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree's CGHV50200F is a gall.
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- CGHV50200F GaN HEMT - Wolfspeed / Cree | Mouser
- Wolfspeed CGHV50200F 200W GaN (Gallium-Nitride) HEMT (High-Electron-Mobility Transistor) is ideal for SatCom applications, such as troposcatter ...
Alternate Names
Wolfspeed has several brands around the world that may have alternate names for CGHV50200F due to regional differences or acquisition. CGHV50200F may also be known as the following names: