IPB026N06NATMA1 - Infineon Technologies

Mfr. #:
IPB026N06NATMA1
Description:
MOSFET N-Ch 60V 100A D2PAK-2
Lifecycle:
New from this manufacturer.
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IPB026N06NATMA1 Information

OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
20-60V OptiMOS Power MOSFETs
Infineon's 20-60V OptiMOS Power MOSFETs are innovative products that serve the market needs throughout the whole energy supply chain. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). These devices consistently set the benchmark in key specifications for power system design, including leading on-state resistance and Figure of Merit characteristics which lead to reduced power losses and improved overall efficiency. These help customers that face the challenge of growing power demand, higher efficiency and lower cost.Learn More

Specifications

RoHS: Y
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Type: OptiMOS Power Transistor
Product: OptiMOS Power
Series: OptiMOS 5
Tradename: OptiMOS
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPB026N06N IPB26N6NXT SP000962142
Channel Mode: Enhancement
Width: 9.25 mm
Forward Transconductance - Min: 80 S
Fall Time: 8 ns
Qg - Gate Charge: 66 nC
Vds - Drain-Source Breakdown Voltage: 60 V
Height: 4.4 mm
Typical Turn-Off Delay Time: 30 ns
Vgs - Gate-Source Voltage: 20 V
Rds On - Drain-Source Resistance: 2.3 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.1 V
Typical Turn-On Delay Time: 17 ns
Rise Time: 15 ns
Pd - Power Dissipation: 136 W
Factory Pack Quantity: 1000
Id - Continuous Drain Current: 100 A
Length: 10 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.139332 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPB026N06NATMA1 Price & Stock

Infineon IPB026N06NATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPB026N06NATMA1CT-ND71217.0615.3512.3410.1410.142019-11-22T13:52:50Z
Digi-KeyIPB026N06NATMA1DKR-ND71217.0615.3512.3410.1410.142019-11-22T13:52:50Z
Digi-KeyIPB026N06NATMA1TR-ND----8.167.482019-11-22T13:52:50Z
RS Components 390628832,045-15.0811.8711.2311.232019-11-23T12:16:37Z
RS Components9062883P2,045-15.0811.8711.2311.232019-11-23T12:16:37Z
RS Components1785074----10.5310.532019-11-23T12:16:37Z
Mouser 2726-IPB026N06NATMA12,12720.0316.9013.779.637.482019-11-23T10:14:50Z
Mouser726-IPB026N06N80016.5114.0111.198.147.032019-11-23T10:14:50Z
Chip One Stop JapanC1S3220004113201,72018.3413.5612.3512.3512.352019-11-23T11:21:25Z
element14 APAC 224807979321.4018.1514.5610.539.082019-11-23T02:27:13Z
element14 APAC2480797RL--18.1514.5610.539.082019-11-23T02:27:13Z
Arrow Electronics 2IPB026N06NATMA14,000---8.817.142019-11-22T16:00:34Z
Arrow ElectronicsIPB026N06NATMA121715.2613.9411.5211.5211.522019-11-23T10:14:50Z
Verical 3IPB026N06NATMA14,0006.496.496.496.496.492019-11-23T10:14:50Z
VericalIPB026N06NATMA11,720-12.1711.0711.0711.072019-11-22T17:44:45Z
VericalIPB026N06NATMA1217-14.1911.6811.6811.682019-11-23T10:14:50Z
AvnetIPB026N06NATMA1------2019-11-22T11:52:31Z
Farnell 2248079712323.3017.5813.969.459.452019-11-23T03:07:31Z
Farnell2480797RL--17.5813.969.459.452019-11-23T03:07:31Z
Newark50Y2002-19.5616.5913.3011.5811.582019-11-23T10:14:51Z
Avnet EuropeSP0009621421,000---8.806.862019-11-23T08:22:00Z
NAC SemiXSKDRABV00551033,000---8.848.222019-11-22T18:49:25Z
Hermes EngineeringIPB026N06NATMA1970-----2019-11-13T06:15:57Z
LTL Group4046658698-----2019-11-15T08:57:11Z
Classic ComponentsIPB026N06NATMA14,620-----2019-11-12T23:57:55Z
GreenTree ElectronicsIPB026N06N2,500-----2019-11-06T14:43:13Z
TMEIPB026N06NATMA198814.5812.528.808.158.152019-11-23T11:01:02Z
Abacus TechnologiesIPB026N06NATMA1508-----2019-11-23T00:03:16Z
North Star MicroIPB026N06NATMA1Contact-----2015-05-20T05:52:12Z
Sierra ICIPB026N06NATMA1Contact-----2019-09-03T21:05:22Z

AD5242BRUZ1M distributor

IPB026N06NATMA1 Infineon Technologies ... - Digikey
Order today, ships today. IPB026N06NATMA1 – N-Channel 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB) from Infineon ...
IPB026N06NATMA1 Infineon Technologies | Mouser
IPB026N06NATMA1 Infineon Technologies MOSFET N-Ch 60V 100A D2PAK-2 datasheet, inventory, & pricing.
OptiMOSTM Power-Transistor - Infineon Technologies
Dec 20, 2012 — 3 Safe operating area. 4 Max. transient thermal impedance. I D=f(V DS); T C=25 °C; D =0. Z thJC=f(t p) parameter: t p parameter: D =t p/T. 1 µs.
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Order today, ships today. IPB026N06NATMA1 – N-Channel 60V 25A (Ta), 100A (Tc) 3W (Ta), 136W (Tc) Surface Mount D²PAK (TO-263AB) from Infineon ...
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IPB026N06NATMA1 datasheet - Infineon OptiMOS 5 Power ...
IPB026N06NATMA1 Infineon OptiMOS 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs.
IPB026N06NATMA1 Infineon | N-Channel MOSFET, 100 A, 60 ...
906-2883, Infineon, N-Channel MOSFET, 100 A, 60 V, 3-Pin D2PAK Infineon IPB026N06NATMA1, Maximum Operating Temperature +175 °C , Number of ...

Alternate Names

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