IPG20N04S412AATMA1 - Infineon Technologies

Mfr. #:
IPG20N04S412AATMA1
Description:
MOSFET MOSFET
Lifecycle:
New from this manufacturer.
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IPG20N04S412AATMA1 Information

Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging – In-Car Charging
Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
20V to 40V N-Channel Automotive MOSFETs
Infineon Technologies 20V to 40V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs address broad range of applications, including EPS motor control, 3-phase and H-bridge motors, HVAC fan control, and electric pumps in combination with PWM control.

Specifications

RoHS: Y
Package / Case: TDSON-8
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPG20N04S4-12A SP000938098
Channel Mode: Enhancement
Configuration: Dual
Qualification: AEC-Q101
Typical Turn-On Delay Time: 9 ns
Fall Time: 8 ns
Factory Pack Quantity: 5000
Length: 5.9 mm
Width: 5.15 mm
Pd - Power Dissipation: 41 W
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs - Gate-Source Voltage: 20 V
Id - Continuous Drain Current: 20 A
Rise Time: 2 ns
Vgs th - Gate-Source Threshold Voltage: 2 V
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Qg - Gate Charge: 18 nC
Rds On - Drain-Source Resistance: 12.2 mOhms
Typical Turn-Off Delay Time: 10 ns
Height: 1.27 mm
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPG20N04S412AATMA1 Price & Stock

Infineon IPG20N04S412AATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Rochester ElectronicsIPG20N04S412AATMA117,4663.653.653.262.952.952020-02-01T09:54:27Z
Mouser726-IPG20N04S412AATM4,5108.317.155.493.843.402020-01-31T21:51:08Z
Digi-KeyIPG20N04S412AATMA1-ND-----3.572020-01-31T16:12:59Z
AvnetIPG20N04S412AATMA1-----3.812020-02-01T04:37:57Z
RutronikTMOS128575,000----3.582020-01-24T03:28:10Z
Avnet EuropeSP000938098-----6.022020-02-01T08:18:03Z
Hermes EngineeringIPG20N04S412AATMA166-----2019-12-30T05:33:54Z
LTL Group40476481,110-----2020-01-31T03:27:32Z
Sierra ICIPG20N04S412AATMA1Contact-----2019-12-16T00:48:56Z

AD5242BRUZ1M distributor

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Alternate Names

Infineon has several brands around the world that may have alternate names for IPG20N04S412AATMA1 due to regional differences or acquisition. IPG20N04S412AATMA1 may also be known as the following names:

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