- Mfr. #:
- IXFH6N100F
- Description:
- MOSFET HiPerRF Power Mosfet 1000V 6A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH6N100F Information
- Power MOSFETs
- IXYS Power MOSFETs are designed for RF applications below 100MHz, linear applications, and high-power, high-frequency, and high-speed switching applications. These Power MOSFETs are available in a wide variety of standard industrial package options for a broad spectrum of market needs, electrical design requirements, and mechanical and mounting specifications.
Specifications
| RoHS: | Y |
|---|---|
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Brand: | IXYS |
| Manufacturer: | IXYS |
| Series: | IXFH6N100 |
| Channel Mode: | Enhancement |
| Rise Time: | 8.6 ns |
| Fall Time: | 8.3 ns |
| Id - Continuous Drain Current: | 6 A |
| Width: | 5.3 mm |
| Typical Turn-Off Delay Time: | 31 ns |
| Factory Pack Quantity: | 30 |
| Height: | 21.46 mm |
| Vgs - Gate-Source Voltage: | 20 V |
| Pd - Power Dissipation: | 180 W |
| Length: | 16.26 mm |
| Typical Turn-On Delay Time: | 11 ns |
| Rds On - Drain-Source Resistance: | 1.9 Ohms |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.229281 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXFH6N100F Price & Stock
IXYS IXFH6N100F pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXFH6N100F-ND | 20 | 65.26 | 58.97 | 46.62 | 37.02 | 37.02 | 2020-01-23T23:05:36Z |
| Mouser | 747-IXFH6N100F | 110 | 65.26 | 58.97 | 46.61 | 46.61 | 46.61 | 2020-01-30T01:03:36Z |
| element14 APAC | 1347754 | - | 73.81 | 66.69 | 52.73 | 41.87 | 41.87 | 2020-01-30T02:27:29Z |
| Farnell | 1347754 | - | 89.37 | 81.12 | 72.57 | 43.77 | 39.49 | 2020-01-30T03:13:49Z |
| Dana Microsystems | IXFH6N100F | 2,434 | - | - | - | - | - | 2020-01-25T03:25:15Z |
AD5242BRUZ1M distributor
- IXFH6N100F IXFT6N100F - IXYS Corporation
- IXFH6N100F. IXFT6N100F. Symbol. Test Conditions. Maximum Ratings. VDSS. TJ. = 25°C to 150°C. 1000. V. VDGR. TJ. = 25°C to 150°C, RGS = 1MΩ. 1000. V.
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Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH6N100F due to regional differences or acquisition. IXFH6N100F may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V