- Mfr. #:
- IXFH6N120P
- Description:
- MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH6N120P Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Type: | Polar HiPerFET Power MOSFET |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXFH6N120 |
| Tradename: | HiPerFET |
| Channel Mode: | Enhancement |
| Qg - Gate Charge: | 92 nC |
| Typical Turn-Off Delay Time: | 60 ns |
| Id - Continuous Drain Current: | 6 A |
| Width: | 5.3 mm |
| Vgs th - Gate-Source Threshold Voltage: | 5 V |
| Vgs - Gate-Source Voltage: | 30 V |
| Factory Pack Quantity: | 30 |
| Forward Transconductance - Min: | 3 S |
| Pd - Power Dissipation: | 250 W |
| Typical Turn-On Delay Time: | 24 ns |
| Height: | 21.46 mm |
| Rds On - Drain-Source Resistance: | 2.75 Ohms |
| Length: | 16.26 mm |
| Fall Time: | 14 ns |
| Rise Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.056438 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXFH6N120P Price & Stock
IXYS IXFH6N120P pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXFH6N120P-ND | 20 | 59.77 | 53.98 | 42.68 | 33.89 | 33.89 | 2020-01-16T20:39:22Z |
| Mouser | 747-IXFH6N120P | 1,567 | 72.13 | 64.98 | 49.12 | 44.85 | 44.85 | 2020-01-22T23:48:26Z |
| TME | IXFH6N120P | 60 | 51.63 | 41.03 | 36.89 | 36.89 | 36.89 | 2020-01-23T10:11:50Z |
| Dana Microsystems | IXFH6N120P | 594 | - | - | - | - | - | 2020-01-18T23:04:15Z |
| Abacus Technologies | IXFH6N120P | 400 | - | - | - | - | - | 2019-12-06T00:07:36Z |
| North Star Micro | IXFH6N120P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
| Sierra IC | IXFH6N120P | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- IXFA6N120P IXFP6N120P IXFH6N120P - Littelfuse
- PolarTM HiPerFETTM. Power MOSFET. N-Channel Enhancement Mode. Avalanche Rated. Fast Intrinsic Diode. IXFA6N120P. IXFP6N120P. IXFH6N120P. V.
- IXFH6N120P IXYS | Discrete Semiconductor Products | DigiKey
- Order today, ships today. IXFH6N120P – N-Channel 1200V 6A (Tc) 250W (Tc) Through Hole TO-247AD (IXFH) from IXYS. Pricing and Availability on millions of ...
- IXFH6N120P IXYS | Mouser
- IXFH6N120P IXYS MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A datasheet, inventory, & pricing.
- IXFH6N120P MOSFET Datasheet pdf - Power MOSFET ...
- IXYS Corporation IXFH6N120P | MOSFET. Advance Technical Information PolarTM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche .
- IXFH6N120P Datasheet(PDF) - IXYS Corporation
- Polar HiPerFET Power MOSFET, IXFH6N120P datasheet, IXFH6N120P circuit, IXFH6N120P data sheet : IXYS, alldatasheet, datasheet, Datasheet search site ...
- IXFH6N120P MOSFET Datasheet pdf - Equivalent. Cross ...
- IXFH6N120P Transistor Datasheet, IXFH6N120P Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog.
- IXFH6N120P IXYS - Transistor: N-MOSFET | unipolar; 1.2kV; 6A ...
- IXYS IXFH6N120P | Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO247-3 - This product is available in Transfer Multisort Elektronik. Check out our wide ...
- IXFH6N120P datasheet - Specifications: Mounting Type ...
- IXFH6N120P Specifications: Mounting Type: Through Hole ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 1200V (1.2kV) ...
- 3PCS IXFH6N120P MOSFET N-CH 1200V 6A TO-247 ... - eBay
- Brand: Does not apply. Vgs(th) (Max) @ Id: 5V @ 1mA, MPN: IXFH6N120P. Gate Charge (Qg) @ Vgs: 92nC @ 10V, FET Type: MOSFET N-Channel Metal Oxide.
- IXFH6N120P IXYS | Mouser 臺灣
- IXFH6N120P IXYS MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A 資料表、庫存和定價。
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH6N120P due to regional differences or acquisition. IXFH6N120P may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V