- Mfr. #:
- IXYH50N120C3D1
- Description:
- IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXYH50N120C3D1 Information
- 1200V XPT High Speed IGBTs
- IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Specifications
RoHS: | Y |
---|---|
Tradename: | XPT |
Packaging: | Tube |
Mounting Style: | Through Hole |
Package / Case: | TO-247AD-3 |
Configuration: | Single |
Technology: | Si |
Manufacturer: | IXYS |
Brand: | IXYS |
Series: | IXYH50N120 |
Subcategory: | IGBTs |
Product Type: | IGBT Transistors |
Product Category: | IGBT Transistors |
Continuous Collector Current Ic Max: | 90 A |
Continuous Collector Current at 25 C: | 90 A |
Pd - Power Dissipation: | 625 W |
Collector-Emitter Saturation Voltage: | 4.2 V |
Maximum Gate Emitter Voltage: | 30 V |
Factory Pack Quantity: | 30 |
Collector- Emitter Voltage VCEO Max: | 1200 V |
Gate-Emitter Leakage Current: | 100 nA |
Unit Weight: | 1.340411 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
IXYH50N120C3D1 Price & Stock
IXYS IXYH50N120C3D1 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXYH50N120C3D1-ND | 10,101 | 74.99 | 67.74 | 53.56 | 42.53 | 42.53 | 2020-02-07T15:59:58Z |
RS Components | 8080281 | 66 | 81.36 | 79.49 | 70.82 | 70.82 | 70.82 | 2020-02-08T22:30:44Z |
RS Components | 8080281P | 66 | - | - | 70.82 | 70.82 | 70.82 | 2020-02-08T22:30:44Z |
RS Components | 9201007 | - | - | - | 66.10 | 64.18 | 64.18 | 2020-02-08T22:30:44Z |
Mouser | 747-IXYH50N120C3D1 | 222 | 74.99 | 67.71 | 53.56 | 50.41 | 50.41 | 2020-02-07T21:39:29Z |
TME | IXYH50N120C3D1 | - | 64.23 | 51.04 | 45.91 | 45.91 | 45.91 | 2020-02-09T10:19:22Z |
Abacus Technologies | IXYH50N120C3D1 | 492 | - | - | - | - | - | 2019-12-06T00:07:36Z |
Nexxon | IXYH50N120C3D1 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
North Star Micro | IXYH50N120C3D1 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
Sierra IC | IXYH50N120C3D1 | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- IXYH50N120C3D1 - Littelfuse
- Symbol. Test Conditions. Characteristic Values. (TJ = 25 C, Unless Otherwise Specified). Min. Typ. Max. BVCES. IC. = 250 A, VGE = 0V. 1200. V. VGE(th). IC.
- IXYH50N120C3D1 IXYS | Discrete Semiconductor Products ...
- Order today, ships today. IXYH50N120C3D1 – IGBT 1200V 90A 625W Through Hole TO-247 (IXYH) from IXYS. Pricing and Availability on millions of electronic ...
- IXYH50N120C3D1 IXYS | Mouser
- IXYH50N120C3D1 IXYS IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT datasheet, inventory, & pricing.
- IXYH50N120C3D1
- 2013 IXYS CORPORATION, All Rights Reserved. IXYH50N120C3D1. V. CES. = 1200V. I. C100. = 50A. V. CE(sat) ≤ 4.0V t fi(typ). = 43ns. DS100388C(02/13).
- IXYH50N120C3D1 - Octopart
- 2011 IXYS CORPORATION, All Rights Reserved. IXYH50N120C3D1. V. CES. = 1200V. I. C110. = 50A. V. CE(sat) ≤ 3.0V t fi(typ). = 57ns. DS100388(09/11).
- IXYS|IXYS IXYH50N120C3D1|IGBTs|LCSC
- IXYS IXYS IXYH50N120C3D1 US$7.52 LCSC electronic components online Transistors IGBTs leaded datasheet+inventory and pricing.
- IXYS IXYH50N120C3D1 - DtSheet
- IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V ...
- IXYH50N120C3D1 IGBT Datasheet pdf - IGBT. Equivalent ...
- IXYS Corporation IXYH50N120C3D1 | IGBT. Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switc.
- IXYH50N120C3D1 IGBT. Datasheet pdf - Equivalent
- IXYH50N120C3D1 Transistor Datasheet, IXYH50N120C3D1 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component ...
- IXYH50N120C3D1 Datasheet(PDF) - IXYS Corporation
- High-Speed IGBT for 20-50 kHz Switching, IXYH50N120C3D1 datasheet, IXYH50N120C3D1 circuit, IXYH50N120C3D1 data sheet : IXYS, alldatasheet, ...
Alternate Names
IXYS has several brands around the world that may have alternate names for IXYH50N120C3D1 due to regional differences or acquisition. IXYH50N120C3D1 may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V