Mfr. #:
IXYH50N120C3D1
Description:
IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

IXYH50N120C3D1 Information

1200V XPT™ High Speed IGBTs
IXYS 1200V XPT™ High Speed IGBTs are high speed, high-gain 1200V Insulated Gate Bipolar Transistor products. The 1200V XPT™ High Speed IGBTs feature high current ratings (105A - 160A, Tc = 25 degrees Centigrade) and are specifically optimized for reduced switching losses in high voltage applications that require hard-switching frequencies of up to 50 kHz. IXYS's 1200V XPT™ High Speed IGBTs have high-speed switching capabilities that allow customers to boost the power conversion efficiency of their designs and to use smaller, lighter and more cost-effective passive components. The resultant effect is a reduction in total system cost of ownership for these 1200V XPT™ High Speed IGBTs and a reduced PCB layout area.Learn More
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Tradename: XPT
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247AD-3
Configuration: Single
Technology: Si
Manufacturer: IXYS
Brand: IXYS
Series: IXYH50N120
Subcategory: IGBTs
Product Type: IGBT Transistors
Product Category: IGBT Transistors
Continuous Collector Current Ic Max: 90 A
Continuous Collector Current at 25 C: 90 A
Pd - Power Dissipation: 625 W
Collector-Emitter Saturation Voltage: 4.2 V
Maximum Gate Emitter Voltage: 30 V
Factory Pack Quantity: 30
Collector- Emitter Voltage VCEO Max: 1200 V
Gate-Emitter Leakage Current: 100 nA
Unit Weight: 1.340411 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXYH50N120C3D1 Price & Stock

IXYS IXYH50N120C3D1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXYH50N120C3D1-ND10,10174.9967.7453.5642.5342.532020-02-07T15:59:58Z
RS Components 380802816681.3679.4970.8270.8270.822020-02-08T22:30:44Z
RS Components8080281P66--70.8270.8270.822020-02-08T22:30:44Z
RS Components9201007---66.1064.1864.182020-02-08T22:30:44Z
Mouser747-IXYH50N120C3D122274.9967.7153.5650.4150.412020-02-07T21:39:29Z
TMEIXYH50N120C3D1-64.2351.0445.9145.9145.912020-02-09T10:19:22Z
Abacus TechnologiesIXYH50N120C3D1492-----2019-12-06T00:07:36Z
NexxonIXYH50N120C3D1Contact-----2018-02-27T00:44:39Z
North Star MicroIXYH50N120C3D1Contact-----2015-05-20T05:52:12Z
Sierra ICIXYH50N120C3D1Contact-----2019-12-16T00:48:56Z

AD5242BRUZ1M distributor

IXYH50N120C3D1 - Littelfuse
Symbol. Test Conditions. Characteristic Values. (TJ = 25 C, Unless Otherwise Specified). Min. Typ. Max. BVCES. IC. = 250 A, VGE = 0V. 1200. V. VGE(th). IC.
IXYH50N120C3D1 IXYS | Discrete Semiconductor Products ...
Order today, ships today. IXYH50N120C3D1 – IGBT 1200V 90A 625W Through Hole TO-247 (IXYH) from IXYS. Pricing and Availability on millions of electronic ...
IXYH50N120C3D1 IXYS | Mouser
IXYH50N120C3D1 IXYS IGBT Transistors XPT 1200V IGBT GenX6 XPT IGBT datasheet, inventory, & pricing.
IXYH50N120C3D1
2013 IXYS CORPORATION, All Rights Reserved. IXYH50N120C3D1. V. CES. = 1200V. I. C100. = 50A. V. CE(sat) ≤ 4.0V t fi(typ). = 43ns. DS100388C(02/13).
IXYH50N120C3D1 - Octopart
2011 IXYS CORPORATION, All Rights Reserved. IXYH50N120C3D1. V. CES. = 1200V. I. C110. = 50A. V. CE(sat) ≤ 3.0V t fi(typ). = 57ns. DS100388(09/11).
IXYS|IXYS IXYH50N120C3D1|IGBTs|LCSC
IXYS IXYS IXYH50N120C3D1 US$7.52 LCSC electronic components online Transistors IGBTs leaded datasheet+inventory and pricing.
IXYS IXYH50N120C3D1 - DtSheet
IXYH50N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES IC100 VCE(sat) tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 4.0V ...
IXYH50N120C3D1 IGBT Datasheet pdf - IGBT. Equivalent ...
IXYS Corporation IXYH50N120C3D1 | IGBT. Advance Technical Information 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switc.
IXYH50N120C3D1 IGBT. Datasheet pdf - Equivalent
IXYH50N120C3D1 Transistor Datasheet, IXYH50N120C3D1 Equivalent, PDF Data Sheets. IGBT. Parameters and Characteristics. Electronic Component ...
IXYH50N120C3D1 Datasheet(PDF) - IXYS Corporation
High-Speed IGBT for 20-50 kHz Switching, IXYH50N120C3D1 datasheet, IXYH50N120C3D1 circuit, IXYH50N120C3D1 data sheet : IXYS, alldatasheet, ...

Alternate Names

IXYS has several brands around the world that may have alternate names for IXYH50N120C3D1 due to regional differences or acquisition. IXYH50N120C3D1 may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V