- Mfr. #:
- SIHG11N80E-GE3
- Description:
- MOSFET 800V Vds 30V Vgs TO-247AC
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHG11N80E-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247AC-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Series: | E |
| Qg - Gate Charge: | 88 nC |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Typical Turn-Off Delay Time: | 55 ns |
| Forward Transconductance - Min: | 4.5 S |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Vgs - Gate-Source Voltage: | 30 V |
| Fall Time: | 18 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Pd - Power Dissipation: | 179 W |
| Rise Time: | 15 ns |
| Id - Continuous Drain Current: | 12 A |
| Number of Channels: | 1 Channel |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SIHG11N80E-GE3 Price & Stock
Vishay SIHG11N80E-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SIHG11N80E-GE3-ND | 497 | 30.39 | 27.26 | 20.62 | 15.69 | 14.09 | 2020-01-16T20:39:22Z |
| Mouser | 78-SIHG11N80E-GE3 | 498 | 30.39 | 25.72 | 21.92 | 18.96 | 18.96 | 2020-01-21T03:49:24Z |
| element14 APAC | 2932926 | 979 | 34.36 | 30.83 | 23.32 | 23.32 | 23.32 | 2020-01-22T02:26:40Z |
| Verical | SIHG11N80E-GE3 | 350 | - | 24.21 | 20.85 | 17.91 | 15.07 | 2020-01-17T17:57:13Z |
| Arrow Electronics | SIHG11N80E-GE3 | 350 | 28.35 | 24.43 | 21.12 | 18.48 | 15.07 | 2020-01-21T22:08:08Z |
| Farnell | 2932926 | 979 | 32.95 | 24.94 | 21.50 | 21.19 | 21.19 | 2020-01-21T02:58:13Z |
| Newark | 78AC6521 | 979 | 39.09 | 34.66 | 26.19 | 21.14 | 19.58 | 2020-01-22T03:09:30Z |
| Avnet Europe | SIHG11N80E-GE3 | - | 28.38 | 25.54 | 22.99 | 22.99 | 22.99 | 2020-01-21T08:52:48Z |
AD5242BRUZ1M distributor
- SIHG11N80E-GE3 Vishay / Siliconix | Mouser
- SIHG11N80E-GE3 Vishay / Siliconix MOSFET 800V Vds 30V Vgs TO-247AC datasheet, inventory, & pricing.
- SIHG11N80E-GE3 Vishay Siliconix | Discrete Semiconductor ...
- Order today, ships today. SIHG11N80E-GE3 – N-Channel 12A (Tc) 179W (Tc) Through Hole TO-247AC from Vishay Siliconix. Pricing and Availability on millions ...
- SiHG11N80E E Series Power MOSFET - Vishay
- Jul 31, 2017 — Lead (Pb)-free and halogen-free. SiHG11N80E-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER.
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- SIHG11N80E-GE3 Vishay, MOSFET, N-CH, 800V
- Buy Vishay SIHG11N80E-GE3 online at Newark. Buy your SIHG11N80E-GE3 from an authorized Vishay distributor.
- SIHG11N80E-GE3 - Vishay - Power MOSFET, N Channel, 800 V
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- SIHG11N80E-GE3 datasheet - Power MOSFET, N Channel ...
- SIHG11N80E-GE3 Power MOSFET, N Channel, 800 V, 12 A, 0.38 ohm, TO-247AC, Through Hole. Transistor Polarity: : N Channel ; Drain Source Voltage Vds: ...
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHG11N80E-GE3 due to regional differences or acquisition. SIHG11N80E-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.