- Mfr. #:
- SIHP28N65E-GE3
- Description:
- MOSFET 650V Vds 30V Vgs TO-220AB
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHP28N65E-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Packaging: | Tube |
Mounting Style: | Through Hole |
Package / Case: | TO-220AB-3 |
Configuration: | Single |
Technology: | Si |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Channel Mode: | Enhancement |
Series: | E |
Rds On - Drain-Source Resistance: | 97 mOhms |
Qg - Gate Charge: | 93 nC |
Typical Turn-Off Delay Time: | 88 ns |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Factory Pack Quantity: | 50 |
Fall Time: | 45 ns |
Rise Time: | 42 ns |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Vgs - Gate-Source Voltage: | 30 V |
Id - Continuous Drain Current: | 29 A |
Typical Turn-On Delay Time: | 28 ns |
Pd - Power Dissipation: | 250 W |
Number of Channels: | 1 Channel |
Unit Weight: | 0.211644 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHP28N65E-GE3 Price & Stock
Vishay SIHP28N65E-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIHP28N65E-GE3-ND | - | - | - | - | 20.42 | 20.42 | 2020-01-16T20:39:22Z |
Avnet | SIHP28N65E-GE3 | - | - | - | - | 21.70 | 19.11 | 2020-01-22T02:01:03Z |
TTI | SIHP28N65E-GE3 | - | - | - | - | - | - | 2020-01-22T07:24:53Z |
Avnet Europe | SIHP28N65E-GE3 | - | 28.41 | 25.57 | 23.01 | 23.01 | 23.01 | 2020-01-22T08:42:12Z |
AD5242BRUZ1M distributor
- SiHP28N65E E Series Power MOSFET - Vishay
- SiHP28N65E-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS.
- SIHP28N65E-GE3 Vishay / Siliconix | Mouser
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- SIHP28N65E-GE3 Vishay / Siliconix MOSFET 650V Vds 30V Vgs TO-220AB datasheets, pricing, and inventory.
- SiHP28N65E-GE3 Datasheet - Datasheets
- Download SiHP28N65E-GE3 pdf datasheet | by Vishay. Updated 02-JAN-21. Includes SiHP28N65E-GE3 rating, characteristics, and configurations.
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHP28N65E-GE3 due to regional differences or acquisition. SIHP28N65E-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.