SIHU4N80E-GE3 - Vishay / Siliconix

Mfr. #:
SIHU4N80E-GE3
Description:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIHU4N80E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-251-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Vds - Drain-Source Breakdown Voltage: 800 V
Factory Pack Quantity: 75
Rise Time: 7 ns
Pd - Power Dissipation: 69 W
Id - Continuous Drain Current: 4.3 A
Typical Turn-Off Delay Time: 26 ns
Fall Time: 20 ns
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 16 nC
Typical Turn-On Delay Time: 12 ns
Vgs - Gate-Source Voltage: 10 V
Forward Transconductance - Min: 1.5 S
Rds On - Drain-Source Resistance: 1.1 Ohms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHU4N80E-GE3 Price & Stock

Vishay SIHU4N80E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser78-SIHU4N80E-GE32,96313.1911.139.227.096.032020-03-20T21:39:50Z
element14 APAC29329373,00013.6111.499.527.326.132020-03-21T02:36:24Z
Digi-KeySIHU4N80E-GE3-ND-13.1911.848.716.265.722020-03-23T13:03:11Z
AvnetSIHU4N80E-GE3-----6.352020-03-21T01:42:32Z
Farnell29329373,00012.499.867.275.655.162020-03-21T01:51:18Z
Newark78AC65263,00013.1911.139.227.096.032020-03-23T03:18:30Z

AD5242BRUZ1M distributor

SIHU4N80E-GE3 Vishay Siliconix | Discrete ... - DigiKey
Order today, ships today. SIHU4N80E-GE3 – N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251) from Vishay Siliconix. Pricing and Availability on ...
SiHU4N80E E Series Power MOSFET - Vishay
Sep 4, 2017 — IPAK (TO-251). Lead (Pb)-free and halogen-free. SiHU4N80E-GE3. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted).
SIHU4N80E-GE3 Vishay Semiconductors | Mouser
SIHU4N80E-GE3 Vishay Semiconductors MOSFET 800V Vds 30V Vgs IPAK (TO-251) datasheet, inventory, & pricing.
SIHU4N80E-GE3 Vishay Siliconix | Discrete ... - Digikey
Order today, ships today. SIHU4N80E-GE3 – N-Channel 4.3A (Tc) 69W (Tc) Through Hole IPAK (TO-251) from Vishay Siliconix. Pricing and Availability on ...
SIHU4N80E-GE3 - Vishay - MOSFET, N-CH, 800V
Buy SIHU4N80E-GE3 - Vishay - MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W. Newark offers fast quotes, same day shipping, fast delivery, wide inventory, ...
SIHU4N80E-GE3 - Vishay - Datasheet, Prices & Inventory ...
Vishay SIHU4N80E-GE3 inventory, pricing and datasheets from authorized distributors. Use the trusted source for electronic parts.
SIHU4N80E-GE3 datasheet - Power MOSFET, N Channel ...
SIHU4N80E-GE3 Power MOSFET, N Channel, 800 V, 4.3 A, 1.1 ohm, TO-251, Through Hole. Transistor Polarity: : N Channel ; Drain Source Voltage Vds: : 800V ...
Vishay SIHU4N80E-GE3 | Upverter
SIHU4N80E-GE3. Transconductance. 1.5S. Manufacturer. Vishay. Threshold Vgs Min. 2V. Description. N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole IPAK ...
SIHU4N80E-GE3 Vishay, Power MOSFET, N Channel, 800 V ...
Buy SIHU4N80E-GE3 - Vishay - Power MOSFET, N Channel, 800 V, 4.3 A, 1.1 ohm, TO-251, Through Hole. Farnell offers fast quotes, same day dispatch, fast ...
SIHU4N80E-GE3 | ET14865601 | Vishay Siliconix - Enrgtech
Buy Vishay Siliconix Vishay Siliconix SIHU4N80E-GE3 SIHU4N80E-GE3(ET14865601) at Enrgtech. Search, Compare, Confirm Availability and Buy easily.

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHU4N80E-GE3 due to regional differences or acquisition. SIHU4N80E-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.