- Mfr. #:
- SIRA18DP-T1-GE3
- Description:
- MOSFET 30V Vds 20V Vgs PowerPAK SO-8
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIRA18DP-T1-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- TrenchFET Gen IV MOSFETs
- Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Specifications
Brand: | Vishay / Siliconix |
---|---|
Manufacturer: | Vishay |
Tradename: | TrenchFET, PowerPAK |
Configuration: | Single |
Technology: | Si |
Mounting Style: | SMD/SMT |
Series: | SIR |
Packaging: | Reel |
Package / Case: | PowerPAK-SO-8 |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Channel Mode: | Enhancement |
RoHS: | E |
Rise Time: | 9 ns |
Length: | 6.15 mm |
Rds On - Drain-Source Resistance: | 6 mOhms |
Forward Transconductance - Min: | 54 S |
Width: | 5.15 mm |
Fall Time: | 5 ns |
Id - Continuous Drain Current: | 33 A |
Factory Pack Quantity: | 3000 |
Vds - Drain-Source Breakdown Voltage: | 30 V |
Qg - Gate Charge: | 21.5 nC |
Vgs - Gate-Source Voltage: | 20 V, - 16 V |
Typical Turn-Off Delay Time: | 15 ns |
Pd - Power Dissipation: | 14.7 W |
Typical Turn-On Delay Time: | 11 ns |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
Height: | 1.04 mm |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Unit Weight: | 0.017870 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIRA18DP-T1-GE3 Price & Stock
Vishay SIRA18DP-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIRA18DP-T1-GE3CT-ND | 2,509 | 4.85 | 4.26 | 2.90 | 2.06 | 2.06 | 2019-12-04T13:59:38Z |
Digi-Key | SIRA18DP-T1-GE3DKR-ND | 2,509 | 4.85 | 4.26 | 2.90 | 2.06 | 2.06 | 2019-12-04T13:59:38Z |
Digi-Key | SIRA18DP-T1-GE3TR-ND | - | - | - | - | - | 1.69 | 2019-12-04T13:59:38Z |
Avnet | SIRA18DP-T1-GE3 | 6,000 | - | - | - | - | 1.85 | 2019-12-05T01:59:35Z |
RS Components | 8141291 | 1,040 | - | - | 2.54 | 2.06 | 2.02 | 2019-12-02T13:21:31Z |
RS Components | 8141291P | 1,040 | - | - | - | 2.06 | 2.02 | 2019-12-02T13:21:31Z |
RS Components | 1657240 | - | - | - | - | - | 1.94 | 2019-12-02T13:21:31Z |
Mouser | 78-SIRA18DP-T1-GE3 | 6,189 | 4.78 | 3.99 | 3.06 | 2.00 | 1.64 | 2019-12-05T15:04:58Z |
element14 APAC | 2364097 | 4,343 | 5.33 | 4.46 | 3.42 | 2.24 | 1.84 | 2019-12-05T02:19:08Z |
Arrow Electronics | SIRA18DP-T1-GE3 | 6,000 | 1.78 | 1.78 | 1.78 | 1.78 | 1.60 | 2019-12-05T15:04:58Z |
Arrow Electronics | SIRA18DP-T1-GE3 | 2,966 | 3.23 | 3.19 | 2.88 | 1.87 | 1.87 | 2019-12-05T15:04:58Z |
Verical | SIRA18DP-T1-GE3 | 6,000 | - | - | - | - | 1.60 | 2019-12-05T15:04:58Z |
Verical | SIRA18DP-T1-GE3 | 2,966 | - | - | 2.88 | 1.87 | 1.87 | 2019-12-05T15:04:58Z |
TTI | SIRA18DP-T1-GE3 | - | - | - | - | - | - | 2019-12-05T07:26:56Z |
Farnell | 2364097 | 4,843 | - | 4.86 | 3.32 | 1.99 | 1.78 | 2019-12-04T14:52:07Z |
Newark | 19X1949 | 2,250 | 4.78 | 3.99 | 3.06 | 2.00 | 2.00 | 2019-12-05T15:04:58Z |
Newark | 96AC3670 | - | 2.10 | 2.10 | 2.10 | 2.10 | 2.04 | 2019-12-05T15:04:58Z |
Avnet Europe | SIRA18DP-T1-GE3 | - | 2.41 | 2.05 | 1.69 | 1.69 | 1.69 | 2019-12-05T08:13:29Z |
Allied Electronics & Automation | 70624538 | - | - | - | - | 1.78 | 1.62 | 2019-12-05T11:26:57Z |
Sourceability | SIRA18DP-T1-GE3 | 6,000 | - | - | - | - | - | 2019-11-26T18:50:02Z |
Abacus Technologies | SIRA18DP-T1-GE3 | 20,328 | - | - | - | - | - | 2019-12-03T00:14:38Z |
AD5242BRUZ1M distributor
- SiRA18DP N-Channel 30 V (D-S) MOSFET - Vishay
- SiRA18DP-T1-GE3. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted). PARAMETER. SYMBOL. LIMIT. UNIT. Drain-Source Voltage. VDS.
- SIRA18DP-T1-GE3 Vishay Siliconix | Discrete Semiconductor ...
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIRA18DP-T1-GE3 due to regional differences or acquisition. SIRA18DP-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.