SIS862DN-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIS862DN-T1-GE3
Description:
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
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SIS862DN-T1-GE3 Information

ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Specifications

Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET, PowerPAK
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Series: SIS
Packaging: Reel
Package / Case: PowerPAK-1212-8
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
RoHS: E
Rds On - Drain-Source Resistance: 7 mOhms
Vds - Drain-Source Breakdown Voltage: 60 V
Forward Transconductance - Min: 60 S
Pd - Power Dissipation: 52 W
Fall Time: 5 ns
Rise Time: 5 ns
Id - Continuous Drain Current: 40 A
Qg - Gate Charge: 32 nC
Factory Pack Quantity: 3000
Length: 3.3 mm
Width: 3.3 mm
Typical Turn-Off Delay Time: 20 ns
Vgs - Gate-Source Voltage: 20 V
Typical Turn-On Delay Time: 12 ns
Vgs th - Gate-Source Threshold Voltage: 1.5 V
Height: 1.04 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIS862DN-T1-GE3 Price & Stock

Vishay SIS862DN-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIS862DN-T1-GE3CT-ND457.716.924.923.403.402020-03-09T12:56:07Z
Digi-KeySIS862DN-T1-GE3DKR-ND457.716.924.923.403.402020-03-09T12:56:07Z
Digi-KeySIS862DN-T1-GE3TR-ND-----3.052020-03-09T12:56:07Z
Avnet 2SIS862DN-T1-GE36,000----3.312020-03-07T03:02:58Z
Avnet40X8692--6.435.285.285.282020-03-07T03:02:58Z
Future ElectronicsSIS862DN-T1-GE33,000----4.192020-03-09T23:20:20Z
TTISIS862DN-T1-GE324,000----3.072020-03-10T06:30:21Z
Mouser78-SIS862DN-T1-GE36,3207.436.435.283.623.282020-03-09T23:21:00Z
element14 APAC24003982,4617.836.775.563.823.292020-03-10T01:52:59Z
Verical 2SIS862DN-T1-GE36,000----3.362020-03-09T17:49:37Z
VericalSIS862DN-T1-GE33,000--8.128.128.122020-03-09T17:49:37Z
Arrow ElectronicsSIS862DN-T1-GE33,0008.127.245.153.773.772020-03-09T18:38:26Z
Farnell 224003981,173-7.215.203.422.982020-03-10T01:58:52Z
Farnell2400398RL----3.422.982020-03-10T01:58:52Z
Newark 240X86926937.436.435.284.594.592020-03-09T14:53:29Z
Newark99W9582-----2.982020-03-09T14:53:29Z
Avnet EuropeSIS862DN-T1-GE3-----4.762020-03-09T08:04:27Z
Allied Electronics & Automation70459592-4.974.974.974.974.792020-03-09T18:21:57Z
NAC SemiXSFP000001830176,000----4.492020-03-09T20:44:44Z
SourceabilitySIS862DN-T1-GE36,000-----2020-03-03T19:24:07Z
Chip 1 ExchangeSIS862DN-T1-GE31,190-----2020-02-23T11:43:22Z
NexxonSIS862DN-T1-GE3Contact-----2018-02-27T00:44:39Z
North Star MicroSIS862DN-T1-GE3Contact-----2014-01-29T16:57:42Z

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SiS862DN N-Channel 60 V (DS) MOSFET - Vishay
May 27, 2013 — 8.7 nC. 0.0105 at VGS = 6.0 V. 40g. 0.0125 at VGS = 4.5 V. 40g. Ordering Information: SiS862DN-T1-GE3 (Lead (Pb)-free and Halogen-free). 1.
SIS862DN-T1-GE3 Vishay Semiconductors | Mouser Singapore
SIS862DN-T1-GE3 Vishay Semiconductors MOSFET 60V Vds 20V Vgs PowerPAK 1212-8 datasheet, inventory & pricing.
SIS862DN-T1-GE3 footprint & symbol by Vishay Siliconix ...
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SUBMIT RFQ for SIS862DN-T1-GE3 at iodparts.com. Find MOSFET- Metal Oxide Semiconductor Field Effect Transistors of Vishay, in inventory, at best price.
SIS862DN-T1-GE3 Vishay | Rutronik24 Distributor
Buy SIS862DN-T1-GE3 N-CH 60V 40A 8,5mOhm PwPAK1212 from VISHAY on Rutronik24. | Get price and stock infos ✓ lead time ✓ datasheets ✓ and ...

Alternate Names

Vishay has several brands around the world that may have alternate names for SIS862DN-T1-GE3 due to regional differences or acquisition. SIS862DN-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.