- Mfr. #:
- NE4210S01
- Description:
- RF JFET Transistors Super Lo Noise HJFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
NE4210S01 Information
OMO is a global distributor of hard-to-find and obsolete parts.
NE4210S01 is available at OMO Electronic.We can offer NE4210S01 for competitive price in the global market, please send us a quotation request for pricing.
Specifications
| RoHS: | Y |
|---|---|
| Subcategory: | Transistors |
| Mounting Style: | SMD/SMT |
| Package / Case: | S0-1 |
| Product Type: | RF JFET Transistors |
| Product Category: | RF JFET Transistors |
| Product: | RF JFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HFET |
| Type: | GaAs HFET |
| Technology: | GaAs |
| Brand: | CEL |
| Manufacturer: | CEL |
| Id - Continuous Drain Current: | 70 mA |
| Forward Transconductance - Min: | 55 mS |
| Vds - Drain-Source Breakdown Voltage: | 4 V |
| Pd - Power Dissipation: | 165 mW |
| Gain: | 13 dB |
| Operating Frequency: | 12 GHz |
| Factory Pack Quantity: | 1 |
| NF - Noise Figure: | 0.5 dB |
| Vgs - Gate-Source Breakdown Voltage: | - 3 V |
| Maximum Operating Temperature: | + 125 C |
NE4210S01 Price & Stock
CEL NE4210S01 pricing and available inventory.
AD5242BRUZ1M distributor
- NE4210S01 DS - Richardson RFPD
- The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it ...
- NE4210S01 HJ-FET Datasheet pdf - N-CHANNEL HJ-FET ...
- NE4210S01; DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUP ER LOW NOISE AMPLIFIER N-CHANNEL ...
- NE4210S01-T1B CEL | Mouser
- NE4210S01-T1B CEL RF JFET Transistors Super Lo Noise HJFET datasheet, inventory, & pricing.
- NE4210S01-A NEC/CEL | Mouser
- NE4210S01-A NEC/CEL RF JFET Transistors Super Lo Noise HJFET datasheet, inventory, & pricing.
- NE4210S01 CEL | Discrete Semiconductor Products | DigiKey
- Order today, ships today. NE4210S01 – RF Mosfet HFET 2V 10mA 12GHz 13dB SMD from CEL. Pricing and Availability on millions of electronic components ...
- NE4210S01 datasheet - Super Low Noise HJ Fet - DigChip
- Part, NE4210S01. Category, Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => RF FETs. Title, GaAs. Description, Super ...
- NE4210S01 Datasheet(PDF) - California Eastern Labs
- SUPER LOW NOISE HJ FET, NE4210S01 datasheet, NE4210S01 circuit, NE4210S01 data sheet : CEL, alldatasheet, datasheet, Datasheet search site for ...
- NE4210S01 Datasheet(PDF) - NEC - Alldatasheet.com
- X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET, NE4210S01 datasheet, NE4210S01 circuit, NE4210S01 data sheet : NEC, alldatasheet, ...
- NE4210S01 - Low Noise GaAs FET, HJ-FET | Renesas
- NE4210S01 DS - Renesas Electronics Corporation
- Apr 1, 2010 — The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and ...
Alternate Names
CEL has several brands around the world that may have alternate names for NE4210S01 due to regional differences or acquisition. NE4210S01 may also be known as the following names:
- CALIFORNIA EASTERN LABS
- California Eastern Laboratories
- CALIFORNIA EASTERN LAB
- NEC/CEL
- CEL CALIFORNIA EASTERN LABS
- CEL-NEC
- CEL CALIFORNIA EASTERN LABS (VA)
- California Eastern Laboratories (CEL)
- CEL (VA)
- CALIFORNIA EASTERN LABORATORIE
- California Eastern Laboratories Inc
- CEL CALIFORNIA EASTERN LABORATORIES
- California Eastern Labs (CEL/NEC)