- Mfr. #:
- IPB60R099P7ATMA1
- Description:
- MOSFET HIGH POWER_NEW
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IPB60R099P7ATMA1 Information
- 600V CoolMOS P7 MOSFETs
- Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
- CoolMOS™ P7 MOSFETs
- Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies.
Specifications
| RoHS: | Y |
|---|---|
| Package / Case: | TO-263-3 |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Brand: | Infineon Technologies |
| Manufacturer: | Infineon |
| Part # Aliases: | IPB60R099P7 SP001664910 |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 89 ns |
| Rds On - Drain-Source Resistance: | 77 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Fall Time: | 5 ns |
| Qg - Gate Charge: | 45 nC |
| Id - Continuous Drain Current: | 31 A |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Typical Turn-On Delay Time: | 23 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Rise Time: | 15 ns |
| Pd - Power Dissipation: | 117 W |
| Factory Pack Quantity: | 1000 |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IPB60R099P7ATMA1 Price & Stock
Infineon IPB60R099P7ATMA1 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IPB60R099P7ATMA1CT-ND | 1,895 | 6.20 | 5.57 | 4.21 | 3.75 | 3.75 | 2020-03-14T12:56:36Z |
| Digi-Key | IPB60R099P7ATMA1DKR-ND | 1,895 | 6.20 | 5.57 | 4.21 | 3.75 | 3.75 | 2020-03-14T12:56:36Z |
| Digi-Key | IPB60R099P7ATMA1TR-ND | 1,000 | - | - | - | 3.21 | 3.16 | 2020-03-14T12:56:36Z |
| Future Electronics | IPB60R099P7ATMA1 | 1,000 | - | - | - | 3.68 | 3.68 | 2020-03-15T00:50:36Z |
| Mouser | 726-IPB60R099P7ATMA1 | 403 | 6.20 | 5.26 | 4.56 | 3.27 | 3.27 | 2020-03-13T22:00:12Z |
| element14 APAC | 2841643 | 1,127 | 6.73 | 5.72 | 4.95 | 3.55 | 3.55 | 2020-03-12T13:48:22Z |
| Verical | IPB60R099P7ATMA1 | 1,000 | - | - | - | 2.89 | 2.84 | 2020-03-14T17:50:15Z |
| Verical | IPB60R099P7ATMA1 | 1,788 | - | 4.16 | 3.62 | 3.01 | 3.01 | 2020-03-14T17:50:15Z |
| Verical | IPB60R099P7ATMA1 | 2,000 | - | - | - | 3.15 | 3.11 | 2020-03-14T17:50:15Z |
| Arrow Electronics | IPB60R099P7ATMA1 | 2,000 | - | - | - | 3.15 | 3.11 | 2020-03-14T15:43:25Z |
| Arrow Electronics | IPB60R099P7ATMA1 | 1,788 | 5.78 | 5.00 | 4.19 | 3.17 | 3.17 | 2020-03-14T15:43:25Z |
| Arrow Electronics | IPB60R099P7ATMA1 | 1,000 | - | - | - | 3.13 | 3.10 | 2020-03-14T15:43:25Z |
| Avnet | IPB60R099P7ATMA1 | - | - | - | - | 3.37 | 2.97 | 2020-03-14T03:37:25Z |
| Farnell | 2841643 | 1,179 | 6.56 | 5.00 | 4.06 | 2.95 | 2.95 | 2020-03-14T01:50:32Z |
| Farnell | 2841643RL | - | - | 5.00 | 4.06 | 2.95 | 2.95 | 2020-03-14T01:50:32Z |
| Newark | 49AC7995 | 1,127 | 6.20 | 5.26 | 4.56 | 3.88 | 3.88 | 2020-01-14T10:41:36Z |
| Avnet Europe | SP001664910 | - | - | - | - | 4.02 | 3.22 | 2020-03-14T08:19:41Z |
| NAC Semi | XSFP00000127190 | 2,000 | - | - | - | 4.77 | 4.46 | 2020-03-13T17:31:54Z |
| Sourceability | IPB60R099P7ATMA1 | 1,000 | - | - | - | - | - | 2020-03-03T19:24:07Z |
| LTL Group | 6128077 | 113 | - | - | - | - | - | 2020-03-13T01:11:39Z |
| Classic Components | IPB60R099P7ATMA1 | 1,540 | - | - | - | - | - | 2020-03-11T22:08:19Z |
| GreenTree Electronics | IPB60R099P7ATMA1 | 10,000 | - | - | - | - | - | 2020-01-16T13:11:16Z |
| TME | IPB60R099P7 | - | 5.57 | 5.02 | 3.97 | 3.97 | 3.97 | 2020-03-14T10:31:51Z |
| Abacus Technologies | IPB60R099P7ATMA1 | 12,196 | - | - | - | - | - | 2020-02-24T20:07:32Z |
| Sierra IC | IPB60R099P7ATMA1 | Contact | - | - | - | - | - | 2020-03-06T17:01:28Z |
AD5242BRUZ1M distributor
- Datasheet IPB60R099P7 - Infineon Technologies
- Sep 29, 2017 — for high voltage power MOSFETs, designed according to the superjunction. (SJ) principle and pioneered by Infineon Technologies. The 600V. CoolMOS™ P7 series is the successor to ...
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- IPB60R099P7ATMA1 Infineon, Power MOSFET, N Channel, 600 V ...
- Buy IPB60R099P7ATMA1 - Infineon - Power MOSFET, N Channel, 600 V, 31 A, 0.077 ohm, TO-263 (D2PAK), Surface Mount. Farnell offers fast quotes, same ...
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- MOSFET, N-CH, 600V, 31A, TO-263 - Newark Canada
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Alternate Names
Infineon has several brands around the world that may have alternate names for IPB60R099P7ATMA1 due to regional differences or acquisition. IPB60R099P7ATMA1 may also be known as the following names:
- Infineon Technologies
- INF
- INFIN
- INFI
- INFINE
- INFINEO
- INFINION
- SIM
- INFENION
- INFIEON
- INFINEON TECH
- INFINEN
- IFT
- IFX
- INFN
- INFINEON/SIEMENS
- INFINEON TECHNO
- IR/Infineon
- INFINEON TECHNOLOGIES (ASIA
- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD
- INFINEON TECH ICs
- INFINEON/PBF
- INFINEON TEC
- InfineonPb