IXTA8N65X2 - IXYS

Mfr. #:
IXTA8N65X2
Description:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Lifecycle:
New from this manufacturer.
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IXTA8N65X2 Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Specifications

RoHS: Y
Series: X2-Class
Packaging: Tube
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Manufacturer: IXYS
Brand: IXYS
Tradename: HiPerFET
Channel Mode: Enhancement
Id - Continuous Drain Current: 8 A
Vds - Drain-Source Breakdown Voltage: 650 V
Typical Turn-Off Delay Time: 53 ns
Rds On - Drain-Source Resistance: 500 mOhms
Factory Pack Quantity: 50
Forward Transconductance - Min: 4.8 S
Vgs - Gate-Source Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Rise Time: 28 ns
Typical Turn-On Delay Time: 24 ns
Fall Time: 24 ns
Pd - Power Dissipation: 150 W
Qg - Gate Charge: 12 nC
Unit Weight: 0.068654 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXTA8N65X2 Price & Stock

IXYS IXTA8N65X2 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXTA8N65X2-ND4016.7015.0011.047.927.242020-05-07T13:52:42Z
element14 APAC26747781619.1217.1812.6410.7010.702020-05-08T02:20:29Z
Farnell26747781610.698.056.266.156.152020-05-08T02:28:21Z
Newark02AC98311616.7015.0011.047.997.782020-05-07T03:13:16Z
Ameya360IXTA8N65X29613.7013.7013.7013.7013.702020-04-23T03:15:09Z
iodPartsIXTA8N65X2200-----2020-05-07T11:36:33Z
TMEIXTA8N65X28610.408.287.717.717.712020-05-07T10:07:24Z
Sierra ICIXTA8N65X2Contact-----2020-03-06T17:01:28Z

AD5242BRUZ1M distributor

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Alternate Names

IXYS has several brands around the world that may have alternate names for IXTA8N65X2 due to regional differences or acquisition. IXTA8N65X2 may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V