- Mfr. #:
- IXTH12N90
- Description:
- MOSFET 12 Amps 900V 0.9 Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTH12N90 Information
OMO is a global distributor of hard-to-find and obsolete parts.
IXTH12N90 is available at OMO Electronic.We can offer IXTH12N90 for competitive price in the global market, please send us a quotation request for pricing.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXTH12N90 |
| Channel Mode: | Enhancement |
| Rds On - Drain-Source Resistance: | 900 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Typical Turn-Off Delay Time: | 63 ns |
| Width: | 5.3 mm |
| Rise Time: | 33 ns |
| Fall Time: | 32 ns |
| Pd - Power Dissipation: | 300 W |
| Factory Pack Quantity: | 30 |
| Height: | 21.46 mm |
| Typical Turn-On Delay Time: | 20 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Length: | 16.26 mm |
| Id - Continuous Drain Current: | 12 A |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.229281 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXTH12N90 Price & Stock
IXYS IXTH12N90 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXTH12N90-ND | - | - | - | 86.10 | 86.10 | 86.10 | 2020-05-03T13:12:22Z |
| USComponent | IXTH12N90 | 82 | - | - | - | - | - | 2020-04-27T15:13:37Z |
| TransparentC | IXTH12N90 | Contact | - | - | - | - | - | 2016-01-28T17:08:50Z |
| North Star Micro | IXTH12N90 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
- IXTH12N90 IXYS | Mouser
- IXTH12N90 IXYS MOSFET 12 Amps 900V 0.9 Rds datasheet, inventory, & pricing.
- IXTH12N90 IXYS | Discrete Semiconductor Products | DigiKey
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- MegaMOSTMFET - Micro-Semiconductor.com
- VDSS. TJ. = 25°C to 150°C. 900. V. VDGR. TJ. = 25°C to 150°C; RGS = 1 MΩ. 900. V. VGS. Continuous. ±20. V. VGSM. Transient. ±30. V. ID25. TC = 25°C. 12. A.
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- IXTH12N90 . Test Conditions to 150°C; RGS 1 M Continuous Transient = 25°C, pulse width limited by TJM = 25°C. Maximum lead temperature for soldering mm ...
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Alternate Names
IXYS has several brands around the world that may have alternate names for IXTH12N90 due to regional differences or acquisition. IXTH12N90 may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V