- Mfr. #:
- SIS990DN-T1-GE3
- Description:
- MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIS990DN-T1-GE3 Information
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Tradename: | TrenchFET, PowerPAK |
Technology: | Si |
Mounting Style: | SMD/SMT |
Series: | SIS |
Packaging: | Reel |
Package / Case: | PowerPAK-1212-8 |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Configuration: | Dual |
Rds On - Drain-Source Resistance: | 85 mOhms |
Typical Turn-Off Delay Time: | 8 ns |
Rise Time: | 8 ns |
Typical Turn-On Delay Time: | 8 ns |
Qg - Gate Charge: | 8 nC |
Fall Time: | 6 ns |
Factory Pack Quantity: | 3000 |
Pd - Power Dissipation: | 25 W |
Vgs - Gate-Source Voltage: | 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
Transistor Type: | 2 N-Channel |
Number of Channels: | 2 Channel |
Id - Continuous Drain Current: | 12.1 A |
Forward Transconductance - Min: | 11 S |
Vds - Drain-Source Breakdown Voltage: | 100 V |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIS990DN-T1-GE3 Price & Stock
Vishay SIS990DN-T1-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIS990DN-T1-GE3CT-ND | 5,550 | 6.33 | 5.68 | 4.04 | 2.79 | 2.79 | 2019-11-22T13:52:50Z |
Digi-Key | SIS990DN-T1-GE3DKR-ND | 5,550 | 6.33 | 5.68 | 4.04 | 2.79 | 2.79 | 2019-11-22T13:52:50Z |
Digi-Key | SIS990DN-T1-GE3TR-ND | 3,000 | - | - | - | - | 2.43 | 2019-11-22T13:52:50Z |
Mouser | 78-SIS990DN-T1-GE3 | 30,959 | 6.61 | 5.25 | 4.08 | 2.85 | 2.61 | 2019-11-22T21:58:05Z |
Arrow Electronics | SIS990DN-T1-GE3 | 1,808 | 5.86 | 4.98 | 3.97 | 2.71 | 2.71 | 2019-11-22T16:00:34Z |
TTI | SIS990DN-T1-GE3 | 6,000 | - | - | - | - | 2.49 | 2019-11-22T07:18:52Z |
Verical | SIS990DN-T1-GE3 | 1,808 | - | - | 3.97 | 2.71 | 2.71 | 2019-11-22T17:44:45Z |
Avnet | SIS990DN-T1-GE3 | - | - | - | - | - | 2.72 | 2019-11-22T11:52:31Z |
Newark | 55X4645 | - | 3.22 | 3.22 | 3.22 | 3.09 | 2.38 | 2019-10-31T12:53:22Z |
Avnet Europe | SIS990DN-T1-GE3 | - | - | - | - | - | 3.56 | 2019-11-22T11:15:22Z |
Sourceability | SIS990DN-T1-GE3 | 9,000 | - | - | - | - | - | 2019-11-11T17:37:31Z |
AD5242BRUZ1M distributor
- SiS990DN Dual N-Channel 100 V (DS) MOSFET - Vishay
- Aug 12, 2013 — 3.30 mm. Ordering Information: SiS990DN-T1-GE3 (Lead (Pb)-free and Halogen-free). PowerPAK® 1212-8. Bottom View. N-Channel MOSFET.
- SIS990DN-T1-GE3 Vishay Siliconix | Discrete Semiconductor ...
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- SIS990DN-T1-GE3 Vishay Semiconductors MOSFET 100V Vds 20V Vgs PowerPAK 1212-8 datasheet, inventory, & pricing.
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIS990DN-T1-GE3 due to regional differences or acquisition. SIS990DN-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.