IPB017N10N5ATMA1 - Infineon Technologies

Mfr. #:
IPB017N10N5ATMA1
Description:
MOSFET N-Ch 100V 180A D2PAK-2
Lifecycle:
New from this manufacturer.
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IPB017N10N5ATMA1 Information

OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Specifications

RoHS: Y
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Package / Case: PG-TO-263-7
Series: OptiMOS 5
Tradename: OptiMOS
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Part # Aliases: IPB017N10N5 SP001227028
Channel Mode: Enhancement
Width: 9.25 mm
Typical Turn-Off Delay Time: 80 ns
Height: 4.4 mm
Pd - Power Dissipation: 375 W
Typical Turn-On Delay Time: 33 ns
Fall Time: 27 ns
Rise Time: 23 ns
Vgs th - Gate-Source Threshold Voltage: 2.2 V
Id - Continuous Drain Current: 180 A
Qg - Gate Charge: 168 nC
Forward Transconductance - Min: 132 S
Factory Pack Quantity: 1000
Vds - Drain-Source Breakdown Voltage: 100 V
Length: 10 mm
Vgs - Gate-Source Voltage: 10 V
Rds On - Drain-Source Resistance: 1.7 mOhms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.056438 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

IPB017N10N5ATMA1 Price & Stock

Infineon IPB017N10N5ATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3IPB017N10N5ATMA1CT-ND1,40944.9340.3730.5327.1427.142020-03-25T13:07:14Z
Digi-KeyIPB017N10N5ATMA1DKR-ND1,40944.9340.3730.5327.1427.142020-03-25T13:07:14Z
Digi-KeyIPB017N10N5ATMA1TR-ND1,000---23.2422.902020-03-25T13:07:14Z
RS Components 31702305860---24.8423.912020-03-20T09:30:46Z
RS Components1711965--46.6334.3330.3530.352020-03-20T09:30:46Z
RS Components1711965P---34.3330.3530.352020-03-20T09:30:46Z
Future ElectronicsIPB017N10N5ATMA1134,000---26.1826.182020-03-25T23:18:15Z
Mouser726-IPB017N10N5ATMA120,60344.8638.1333.0223.7420.412020-03-25T20:11:04Z
element14 APAC27258357,84346.2939.3434.0824.5023.262020-03-26T02:38:38Z
Chip One Stop JapanC1S3220006626231,09849.8342.1531.7531.7531.752020-03-25T12:07:35Z
Verical 5IPB017N10N5ATMA11,000---23.4523.452020-03-25T20:11:04Z
VericalIPB017N10N5ATMA180,000---28.4028.402020-03-25T20:11:04Z
VericalIPB017N10N5ATMA140-37.0829.2329.2329.232020-03-25T20:11:04Z
VericalIPB017N10N5ATMA11,098-49.1536.9836.9836.982020-03-25T17:48:43Z
VericalIPB017N10N5ATMA1987--47.3947.3947.392020-03-25T17:48:43Z
Arrow ElectronicsIPB017N10N5ATMA14042.9137.0829.2329.2329.232020-03-25T20:11:04Z
AvnetIPB017N10N5ATMA1----24.4321.552020-03-26T02:32:05Z
Farnell 227258357,88146.9136.1129.3621.4321.432020-03-26T01:48:52Z
Farnell2725835RL--36.1129.3621.4321.432020-03-26T01:48:52Z
Newark13AC90227,84344.8638.1333.0228.1328.132020-03-25T20:11:04Z
Avnet EuropeSP0012270283,000---27.9922.392020-03-26T07:20:25Z
NAC Semi 2XSFP00000119932107,000---31.1131.112020-03-25T19:38:34Z
NAC SemiXSKDRABS01000572,000---28.7726.792020-03-25T19:38:34Z
LTL Group40466422,000-----2020-03-26T00:39:03Z
QuestIPB017N10N578985.4756.9852.7142.7342.732020-03-25T16:13:51Z
GreenTree ElectronicsIPB017N10N5ATMA110,000-----2020-01-16T13:11:16Z
TMEIPB017N10N5ATMA140339.0235.0726.9425.0425.042020-03-25T10:58:10Z
Classic ComponentsIPB017N10N5ATMA13,080-----2020-03-11T22:08:19Z
Abacus TechnologiesIPB017N10N5ATMA14,065-----2020-02-24T20:07:32Z
Sierra ICIPB017N10N5ATMA1Contact-----2020-03-06T17:01:28Z

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Datasheet IPB017N10N5 - Infineon Technologies
IPB017N10N5ATMA1 Infineon Technologies | Discrete ...
IPB017N10N5ATMA1 Infineon Technologies | Mouser
IPB017N10N5ATMA1 by Infineon Technologies AG ...
IPB017N10N5ATMA1 Infineon - MOSFETs - Distributors, Price ...
Power MOSFET, N Channel, 100 V, 180 A, 0.0015 ohm, TO ...
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IPB017N10N5ATMA1 INFINEON TECHNOLOGIES ...
IPB017N10N5ATMA1 - Infineon Technologies - Discrete ...
IPB017N10N5ATMA1 - Infineon - Power MOSFET, N Channel, 100 V

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