IXFR40N90P - IXYS

Mfr. #:
IXFR40N90P
Description:
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds
Lifecycle:
New from this manufacturer.
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IXFR40N90P Information

900V Polar HiPerFET Power MOSFETs
IXYS 900V Polar HiPerFET™ Power MOSFETs are available with drain current ratings from 10.5A to 56A and combine the advantages derived from the IXYS Polar Technology platform and HiPerFET process to provide improved power efficiency and reliability in demanding high-voltage conversion systems that require bus voltage operation of up to 700V. IXYS 900V Polar HiPerFET Power MOSFETs are tailored to minimize on-state resistance while maintaining low gate charge, resulting in a substantial reduction in conduction and switching losses. These IXYS devices feature a fast intrinsic diode for low reverse recovery charge and improved turn-off dV/dt immunity. These high reliability Polar HiPerFET Power MOSFETs are ideal for use in a variety of applications, including switch-mode / resonant-mode power supplies, DC/DC converters, laser drivers, and more.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Brand: IXYS
Manufacturer: IXYS
Series: IXFR40N90
Tradename: HiPerFET
Vds - Drain-Source Breakdown Voltage: 900 V
Typical Turn-Off Delay Time: 77 ns
Vgs th - Gate-Source Threshold Voltage: 6.5 V
Typical Turn-On Delay Time: 53 ns
Rise Time: 50 ns
Fall Time: 46 ns
Pd - Power Dissipation: 300 W
Vgs - Gate-Source Voltage: 30 V
Forward Transconductance - Min: 30 S
Factory Pack Quantity: 30
Qg - Gate Charge: 230 nC
Rds On - Drain-Source Resistance: 230 mOhms
Id - Continuous Drain Current: 21 A
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.186952 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFR40N90P Price & Stock

IXYS IXFR40N90P pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXFR40N90P-ND---127.71127.71127.712020-02-06T17:27:51Z
Mouser747-IXFR40N90P-174.61158.75131.78120.81120.812020-02-05T22:19:18Z
TMEIXFR40N90P-140.90111.80100.32100.32100.322020-02-06T09:50:46Z
Dana MicrosystemsIXFR40N90P335-----2020-02-01T16:08:41Z
NexxonIXFR40N90PContact-----2018-02-27T00:44:39Z
North Star MicroIXFR40N90PContact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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Alternate Names

IXYS has several brands around the world that may have alternate names for IXFR40N90P due to regional differences or acquisition. IXFR40N90P may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V