STP110N8F7 - STMicroelectronics

Mfr. #:
STP110N8F7
Description:
MOSFET N-channel 80 V, 6.4 mOhm typ., 80 A STripFET F7 Power MOSFET in a TO-220 package
Lifecycle:
New from this manufacturer.
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STP110N8F7 Information

STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Specifications

RoHS: Y
Mounting Style: Through Hole
Package / Case: TO-220-3
Configuration: Single
Technology: Si
Tradename: STripFET
Series: STP110N8F7
Manufacturer: STMicroelectronics
Brand: STMicroelectronics
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Rise Time: 95 ns
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 80 A
Rds On - Drain-Source Resistance: 7.5 mOhms
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 49 ns
Qg - Gate Charge: 46.8 nC
Fall Time: 32 ns
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Pd - Power Dissipation: 170 W
Factory Pack Quantity: 1000
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.079014 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

STP110N8F7 Price & Stock

STMicroelectronics STP110N8F7 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key497-16486-5-ND96312.4011.148.205.885.382020-01-13T13:58:39Z
Mouser511-STP110N8F789412.3310.478.416.105.682020-01-14T02:27:25Z
Arrow Electronics 2STP110N8F71,000---6.125.292020-01-15T15:36:10Z
Arrow ElectronicsSTP110N8F71,000---6.335.422020-01-15T15:36:10Z
VericalSTP110N8F71,000---7.017.012020-01-15T17:55:14Z
AvnetSTP110N8F7------2020-01-15T05:20:58Z
Newark84Y8836----5.265.262020-01-15T03:39:57Z
Avnet EuropeSTP110N8F7---7.156.006.002020-01-15T08:30:01Z
SourceabilitySTP110N8F71,000-----2020-01-06T21:24:21Z
LTL Group45128981,859-----2020-01-14T06:10:10Z
LCSCC4118959746.354.654.023.823.822019-11-19T23:40:06Z
Classic ComponentsSTP110N8F7963-----2020-01-08T00:13:17Z
Abacus TechnologiesSTP110N8F712,196-----2019-12-06T00:07:36Z
Sierra ICSTP110N8F7Contact-----2019-12-16T00:48:56Z

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Alternate Names

STMicroelectronics has several brands around the world that may have alternate names for STP110N8F7 due to regional differences or acquisition. STP110N8F7 may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • SGS THOMPSON
  • STMICROE
  • STMICR
  • SESCOSEM
  • ST8
  • ST MIC
  • WAFERSCALE
  • SGS-ATES
  • STMICROELECTRON
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • SGST
  • THOMS
  • STMICROELECT
  • WAFERSCALE INTEGRATION INC
  • STMICROEL
  • SGS-Thomson Microelectronics
  • ST MICROELECTRO
  • SGS THOMP
  • SGS/ST
  • ST Microeletronics