- Mfr. #:
- CSD85301Q2T
- Description:
- MOSFET Dual N-Channel NexFET Pwr MOSFET
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CSD85301Q2T Information
- NexFET N-Channel Power MOSFETs
- Texas Instruments NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.
- TI N-Channel 8-23-12
- NexFET™ Power MOSFETs
- Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Specifications
RoHS: | Y |
---|---|
Package / Case: | WSON-FET-6 |
Manufacturer: | Texas Instruments |
Brand: | Texas Instruments |
Technology: | Si |
Mounting Style: | SMD/SMT |
Packaging: | Reel |
Tradename: | NexFET |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Configuration: | Dual |
Series: | CSD85301Q2 |
Vgs th - Gate-Source Threshold Voltage: | 600 mV |
Typical Turn-On Delay Time: | 6 ns |
Qg - Gate Charge: | 5.4 nC |
Id - Continuous Drain Current: | 5 A |
Rds On - Drain-Source Resistance: | 27 mOhms |
Rise Time: | 26 ns |
Factory Pack Quantity: | 250 |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Pd - Power Dissipation: | 2.3 W |
Length: | 2 mm |
Width: | 2 mm |
Transistor Type: | 2 N-Channel |
Number of Channels: | 2 Channel |
Fall Time: | 15 ns |
Typical Turn-Off Delay Time: | 14 ns |
Vgs - Gate-Source Voltage: | 10 V |
Height: | 0.75 mm |
Unit Weight: | 0.000342 oz |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
CSD85301Q2T Price & Stock
Texas Instruments CSD85301Q2T pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | 296-38668-1-ND | 3,424 | 0.827 | 0.728 | 0.496 | 0.496 | 0.496 | 2020-03-06T13:55:45Z |
Digi-Key | 296-38668-6-ND | 3,424 | 0.827 | 0.728 | 0.496 | 0.496 | 0.496 | 2020-03-06T13:55:45Z |
Digi-Key | 296-38668-2-ND | 3,250 | - | - | - | 0.415 | 0.353 | 2020-03-06T13:55:45Z |
Texas Instruments | CSD85301Q2T | 9,730 | 0.551 | 0.551 | 0.469 | 0.221 | 0.221 | 2020-03-07T02:04:08Z |
Mouser | 595-CSD85301Q2T | 1,211 | 0.827 | 0.689 | 0.413 | 0.353 | 0.298 | 2020-03-06T23:28:26Z |
element14 APAC | 3009682 | 1,939 | 0.904 | 0.754 | 0.482 | 0.386 | 0.350 | 2020-03-07T14:45:09Z |
Avnet | CSD85301Q2T | - | - | - | - | - | 0.304 | 2020-03-07T03:02:58Z |
Farnell | 3009682 | 1,939 | - | 0.773 | 0.446 | 0.324 | 0.300 | 2020-03-07T03:21:14Z |
Farnell | 3009682RL | - | - | - | - | 0.324 | 0.300 | 2020-03-07T03:21:14Z |
Newark | 28AH2110 | 1,939 | 0.827 | 0.689 | 0.441 | 0.441 | 0.441 | 2020-03-07T03:17:14Z |
Avnet Europe | CSD85301Q2T | - | - | - | - | 0.489 | 0.397 | 2020-03-07T08:38:47Z |
Hamilton Americas | CSD85301Q2T | 4,812 | - | - | - | - | - | 2020-03-03T22:15:55Z |
LTL Group | 3933996 | 500 | - | - | - | - | - | 2020-03-06T07:59:49Z |
Sierra IC | CSD85301Q2T | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
AD5242BRUZ1M distributor
- CSD85301Q2T Texas Instruments | Mouser
- CSD85301Q2T Texas Instruments | Discrete Semiconductor ...
- CSD85301Q2T | Buy TI parts | TI.com - Texas Instruments
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- CSD85301Q2T - Electronic Specifier
- CSD85301Q2T from Texas Instruments - Electronics Datasheets
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- TEXAS INSTRUMENTS CSD85301Q2T MOSFET, DUAL N ...
- Dual MOSFET, N Channel, 20 V, 5 A, 0.023 ohm, WSON ...
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