- Mfr. #:
- SI7157DP-T1-GE3
- Description:
- MOSFET -20V Vds 12V Vgs PowerPAK SO-8
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SI7157DP-T1-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- TrenchFET® P-Channel MOSFETs
- Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Tradename: | TrenchFET |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Series: | SI7 |
| Packaging: | Reel |
| Package / Case: | PowerPAK-SO-8 |
| Transistor Polarity: | P-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Channel Mode: | Enhancement |
| Qg - Gate Charge: | 625 nC |
| Id - Continuous Drain Current: | 60 A |
| Fall Time: | 55 ns |
| Factory Pack Quantity: | 3000 |
| Typical Turn-Off Delay Time: | 220 ns |
| Typical Turn-On Delay Time: | 20 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Rise Time: | 14 ns |
| Forward Transconductance - Min: | 120 S |
| Vgs - Gate-Source Voltage: | 12 V |
| Pd - Power Dissipation: | 104 W |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Rds On - Drain-Source Resistance: | 1.25 mOhms |
| Transistor Type: | 1 P-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.017870 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SI7157DP-T1-GE3 Price & Stock
Vishay SI7157DP-T1-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SI7157DP-T1-GE3CT-ND | 24,250 | 11.90 | 10.61 | 7.55 | 5.21 | 5.21 | 2019-12-03T14:05:12Z |
| Digi-Key | SI7157DP-T1-GE3DKR-ND | 24,250 | 11.90 | 10.61 | 7.55 | 5.21 | 5.21 | 2019-12-03T14:05:12Z |
| Digi-Key | SI7157DP-T1-GE3TR-ND | 24,000 | - | - | - | - | 4.54 | 2019-12-03T14:05:12Z |
| Avnet | SI7157DP-T1-GE3 | 9,000 | - | - | - | - | 5.14 | 2019-12-04T02:48:28Z |
| Avnet | 29X6571 | - | 12.14 | 12.14 | 7.71 | 7.17 | 7.17 | 2019-12-04T02:48:28Z |
| Mouser | 78-SI7157DP-T1-GE3 | 1,380 | 11.90 | 9.71 | 7.62 | 5.39 | 4.46 | 2019-12-04T09:59:38Z |
| element14 APAC | 2471947 | 24 | 13.25 | 11.81 | 9.21 | 6.01 | 6.01 | 2019-12-04T02:22:23Z |
| Arrow Electronics | SI7157DP-T1-GE3 | 48,000 | - | - | - | - | 4.41 | 2019-12-04T09:59:38Z |
| TTI | SI7157DP-T1-GE3 | 6,000 | - | - | - | - | 4.77 | 2019-12-04T07:29:31Z |
| Verical | SI7157DP-T1-GE3 | 48,000 | - | - | - | - | 4.41 | 2019-12-04T09:59:38Z |
| Farnell | 2471947 | 3 | - | 11.50 | 8.42 | 5.34 | 4.96 | 2019-12-03T15:12:44Z |
| Farnell | 2471947RL | - | - | - | - | 5.34 | 4.96 | 2019-12-03T15:12:44Z |
| Newark | 43Y2402 | 3 | 11.90 | 11.90 | 7.62 | 5.39 | 5.39 | 2019-12-04T09:59:38Z |
| Newark | 81AC9924 | 9,000 | 5.86 | 5.86 | 5.86 | 5.86 | 5.71 | 2019-12-04T09:59:38Z |
| Avnet Europe | SI7157DP-T1-GE3 | - | - | - | - | - | 6.67 | 2019-12-04T08:48:05Z |
| Sourceability | SI7157DP-T1-GE3 | 3 | - | - | - | - | - | 2019-11-26T18:50:02Z |
| Chip 1 Exchange | SI7157DP-T1-GE3 | 1,672 | - | - | - | - | - | 2019-11-19T09:43:30Z |
AD5242BRUZ1M distributor
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- SI7157DP-T1-GE3 by Vishay MOSFETs | Avnet
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Alternate Names
Vishay has several brands around the world that may have alternate names for SI7157DP-T1-GE3 due to regional differences or acquisition. SI7157DP-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.