- Mfr. #:
- SIHW33N60E-GE3
- Description:
- MOSFET 600V Vds 30V Vgs TO-247AD
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHW33N60E-GE3 Information
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
- E Series High Voltage MOSFETs
- Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Specifications
RoHS: | Y |
---|---|
Brand: | Vishay / Siliconix |
Manufacturer: | Vishay |
Packaging: | Tube |
Mounting Style: | Through Hole |
Package / Case: | TO-247AD-3 |
Configuration: | Single |
Technology: | Si |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Category: | MOSFET |
Product Type: | MOSFET |
Channel Mode: | Enhancement |
Series: | E |
Typical Turn-Off Delay Time: | 99 ns |
Rds On - Drain-Source Resistance: | 99 mOhms |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Rise Time: | 60 ns |
Fall Time: | 54 ns |
Factory Pack Quantity: | 480 |
Vgs th - Gate-Source Threshold Voltage: | 4 V |
Id - Continuous Drain Current: | 33 A |
Vgs - Gate-Source Voltage: | 30 V |
Typical Turn-On Delay Time: | 28 ns |
Pd - Power Dissipation: | 278 W |
Qg - Gate Charge: | 100 nC |
Unit Weight: | 1.340411 oz |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
SIHW33N60E-GE3 Price & Stock
Vishay SIHW33N60E-GE3 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | SIHW33N60E-GE3-ND | 480 | 44.35 | 39.83 | 30.13 | 22.93 | 22.59 | 2020-01-31T16:12:59Z |
Verical | SIHW33N60E-GE3 | 134 | - | - | 23.32 | 23.32 | 23.32 | 2020-02-04T17:58:31Z |
Mouser | 78-SIHW33N60E-GE3 | 470 | 46.86 | 38.77 | 31.94 | 24.83 | 24.83 | 2020-02-03T23:00:00Z |
element14 APAC | 2311569 | 2,635 | 47.72 | 42.86 | 32.42 | 24.67 | 24.32 | 2020-02-05T02:12:20Z |
TTI | SIHW33N60E-GE3 | - | - | - | - | - | - | 2020-02-05T07:23:35Z |
Avnet | SIHW33N60E-GE3 | - | - | - | - | - | - | 2020-02-05T04:00:44Z |
Farnell | 2311569 | 2,624 | 53.46 | 44.21 | 36.42 | 29.54 | 29.54 | 2020-02-05T03:15:51Z |
Newark | 68W7077 | 134 | 18.62 | 18.62 | 18.62 | 18.62 | 18.62 | 2020-02-05T03:12:51Z |
North Star Micro | SIHW33N60E-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHW33N60E-GE3 due to regional differences or acquisition. SIHW33N60E-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.