FDB0105N407L - ON Semiconductor / Fairchild

Mfr. #:
FDB0105N407L
Description:
MOSFET 40V N-Channel Power Trench MOSFET
Lifecycle:
New from this manufacturer.
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FDB0105N407L Information

N-Channel PowerTrench® MOSFETs
ON Semiconductor N-Channel PowerTrench® MOSFETs are produced using advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. ON Semiconductor N-Channel PowerTrench® MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.The FDD10N20LZ and FDD7N25LZ are N-Channel enhancement mode power field effect transistors that are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.The FDMC6296 is a single N-Channel MOSFET in a thermally efficient MicroFET Package that has been specifically designed to perform well in Point of Load converters. Providing an optimized balance between rDS(on) and gate charge this device can be effectively used as a "high side" control swtich or "low side" synchronous rectifier.Learn more

Specifications

RoHS: Y
Package / Case: TO-263-7
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Tradename: PowerTrench
Brand: ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Series: FDB0105N407L
Channel Mode: Enhancement
Width: 9.4 mm
Factory Pack Quantity: 800
Rise Time: 69 ns
Fall Time: 61 ns
Id - Continuous Drain Current: 460 A
Typical Turn-On Delay Time: 45 ns
Vds - Drain-Source Breakdown Voltage: 40 V
Height: 4.7 mm
Pd - Power Dissipation: 300 W
Forward Transconductance - Min: 286 S
Qg - Gate Charge: 208 nC
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Typical Turn-Off Delay Time: 117 ns
Length: 10.2 mm
Rds On - Drain-Source Resistance: 1.8 mOhms
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.046279 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C

FDB0105N407L Price & Stock

ON Semiconductor FDB0105N407L pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3FDB0105N407LCT-ND79737.5633.7325.5124.0924.092020-02-21T17:09:39Z
Digi-KeyFDB0105N407LDKR-ND79737.5633.7325.5124.0924.092020-02-21T17:09:39Z
Digi-KeyFDB0105N407LTR-ND----22.0219.262020-02-21T17:09:39Z
AvnetFDB0105N407L800---20.0117.962020-02-21T03:38:43Z
Mouser512-FDB0105N407L80036.4331.0226.8719.2719.272020-02-21T22:48:47Z
element14 APAC256521938437.8932.2527.9320.0419.092020-02-22T02:14:54Z
VericalFDB0105N407L18-29.9929.9929.9929.992020-02-23T17:52:18Z
Arrow Electronics 2FDB0105N407L80031.7128.1324.2319.3218.592020-02-22T16:01:29Z
Arrow ElectronicsFDB0105N407L1834.6429.9929.9929.9929.992020-02-22T16:01:29Z
Farnell 2256521939840.5529.5825.5817.5117.512020-02-22T02:55:57Z
Farnell2565219RL--29.5825.5817.5117.512020-02-22T02:55:57Z
Newark84Y582138440.1634.7430.5226.5126.512020-02-22T03:49:50Z
Avnet EuropeFDB0105N407L----24.4519.072020-02-24T08:10:19Z
Ameya360FDB0105N407L----21.8521.852020-02-21T09:37:43Z
SourceabilityFDB0105N407L4,381-----2020-02-21T16:07:13Z
Classic ComponentsFDB0105N407L770-----2020-02-21T23:53:28Z
Sierra ICFDB0105N407LContact-----2019-12-16T00:48:56Z

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Alternate Names

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