SCT3022KLGC11 Information

Silicon Carbide (SiC) Power Devices

ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.

SCT3x 3rd Generation SiC Trench MOSFETs

ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.

N-Channel SiC Power MOSFETs

ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.

Specifications

SCT3022KLGC11 Price & Stock

Rohm SCT3022KLGC11 pricing and available inventory.

AD5242BRUZ1M distributor

Alternate Names

Rohm has several brands around the world that may have alternate names for SCT3022KLGC11 due to regional differences or acquisition. SCT3022KLGC11 may also be known as the following names: