SIHD6N65E-GE3 - Vishay / Siliconix

Mfr. #:
SIHD6N65E-GE3
Description:
MOSFET 650V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
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Purchase

SIHD6N65E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Packaging: Bulk
Pd - Power Dissipation: 78 W
Id - Continuous Drain Current: 7 A
Vds - Drain-Source Breakdown Voltage: 650 V
Rds On - Drain-Source Resistance: 600 mOhms
Length: 6.73 mm
Width: 6.22 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Factory Pack Quantity: 3000
Typical Turn-Off Delay Time: 30 ns
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 24 nC
Fall Time: 20 ns
Height: 2.38 mm
Typical Turn-On Delay Time: 14 ns
Rise Time: 12 ns
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHD6N65E-GE3 Price & Stock

Vishay SIHD6N65E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser78-SIHD6N65E-GE3112.7710.128.026.885.782019-12-17T12:58:35Z
Digi-KeySIHD6N65E-GE3-ND-11.9110.737.895.675.182019-12-22T13:56:25Z
element14 APAC2364075-13.4712.149.759.759.752019-12-21T02:43:57Z
AvnetSIHD6N65E-GE3-----5.722019-12-21T03:35:55Z
TTISIHD6N65E-GE3------2019-12-21T10:19:06Z
Farnell236407579-10.117.695.265.182019-12-19T02:54:45Z
Newark99W9459-5.925.925.925.925.592019-12-17T12:58:35Z
Avnet EuropeSIHD6N65E-GE3-7.776.605.445.445.442019-12-22T07:36:27Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHD6N65E-GE3 due to regional differences or acquisition. SIHD6N65E-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.