- Mfr. #:
- SIHH11N65EF-T1-GE3
- Description:
- MOSFET 650V Vds 30V Vgs PowerPAK 8 x 8
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIHH11N65EF-T1-GE3 Information
- EF Series High Voltage Power MOSFETs
- Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
- Industrial Power Solution
- Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Configuration: | Single |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Package / Case: | PowerPAK-8x8-4 |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Series: | EF |
| Length: | 8 mm |
| Width: | 8 mm |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Typical Turn-Off Delay Time: | 43 ns |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Qg - Gate Charge: | 35 nC |
| Rds On - Drain-Source Resistance: | 332 mOhms |
| Factory Pack Quantity: | 3000 |
| Vgs - Gate-Source Voltage: | 30 V |
| Rise Time: | 26 ns |
| Fall Time: | 25 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Pd - Power Dissipation: | 130 W |
| Id - Continuous Drain Current: | 11 A |
| Height: | 1 mm |
| Number of Channels: | 1 Channel |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SIHH11N65EF-T1-GE3 Price & Stock
Vishay SIHH11N65EF-T1-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SIHH11N65EF-T1-GE3CT-ND | 3,045 | 30.31 | 27.23 | 20.60 | 15.68 | 15.68 | 2020-03-02T14:01:37Z |
| Digi-Key | SIHH11N65EF-T1-GE3DKR-ND | 3,045 | 30.31 | 27.23 | 20.60 | 15.68 | 15.68 | 2020-03-02T14:01:37Z |
| Digi-Key | SIHH11N65EF-T1-GE3TR-ND | 3,000 | - | - | - | - | 15.00 | 2020-03-02T14:01:37Z |
| Avnet | SIHH11N65EF-T1-GE3 | 6,000 | - | - | - | - | 15.69 | 2020-02-29T04:03:43Z |
| Avnet Europe | SIHH11N65EF-T1-GE3 | 50 | - | - | - | - | 19.01 | 2020-03-02T07:43:45Z |
| Ameya360 | SIHH11N65EF-T1-GE3 | 50 | 18.36 | 18.36 | 18.36 | 18.36 | 18.36 | 2020-02-28T06:24:20Z |
| NAC Semi | XSKDRABV0041562 | 2,400 | - | - | 21.98 | 21.98 | 20.51 | 2020-03-02T19:47:21Z |
| LTL Group | 4285346 | 51 | - | - | - | - | - | 2020-03-02T01:51:57Z |
| Classic Components | SIHH11N65EF-T1-GE3 | 2,310 | - | - | - | - | - | 2020-02-28T00:54:13Z |
AD5242BRUZ1M distributor
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Alternate Names
Vishay has several brands around the world that may have alternate names for SIHH11N65EF-T1-GE3 due to regional differences or acquisition. SIHH11N65EF-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.