- Mfr. #:
- IXFK360N10T
- Description:
- MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFK360N10T Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-264-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Brand: | IXYS |
| Manufacturer: | IXYS |
| Series: | IXFK360N10 |
| Tradename: | HiPerFET |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 80 ns |
| Qg - Gate Charge: | 525 nC |
| Typical Turn-On Delay Time: | 47 ns |
| Vgs th - Gate-Source Threshold Voltage: | 4.5 V |
| Id - Continuous Drain Current: | 360 A |
| Factory Pack Quantity: | 25 |
| Vgs - Gate-Source Voltage: | 20 V |
| Rds On - Drain-Source Resistance: | 2.9 mOhms |
| Forward Transconductance - Min: | 180 S |
| Fall Time: | 160 ns |
| Rise Time: | 100 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Pd - Power Dissipation: | 1.25 kW |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.264555 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
IXFK360N10T Price & Stock
IXYS IXFK360N10T pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXFK360N10T-ND | 23 | 70.25 | 63.44 | 50.16 | 39.83 | 39.83 | 2020-01-12T13:59:40Z |
| Mouser | 747-IXFK360N10T | 124 | 84.79 | 76.31 | 57.70 | 52.67 | 52.67 | 2020-01-10T22:28:32Z |
| TME | IXFK360N10T | 3 | 59.99 | 47.70 | 42.86 | 42.86 | 42.86 | 2020-01-13T10:42:13Z |
| Dana Microsystems | IXFK360N10T | 1,600 | - | - | - | - | - | 2020-01-10T15:30:26Z |
| Nexxon | IXFK360N10T | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
| Sierra IC | IXFK360N10T | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
| North Star Micro | IXFK360N10T | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
- IXFK360N10T IXYS | Mouser
- IXFK360N10T IXYS | Discrete Semiconductor Products | DigiKey
- IXFK360N10T IXFX360N10T - LittelfuseIXFK360N10T - Gen1 Series - N Channel Trench Gate ...
- IXFK360N10T IXFX360N10T - Littelfuse
- IXFK360N10T - Gen1 Series - N Channel Trench Gate ...
- IXFK360N10T - IXYS | TTI, Inc. - TTI Europe
- IXYS IXFK360N10T - TrustedParts.com
- IXFK360N10T by IXYS | MOSFETs | Arrow.com
- IXFK360N10T IXYS - Transistor: N-MOSFET | unipolar; 100V
- IXFK360N10T MOSFET. Datasheet pdf. Equivalent
- IXFK360N10T Datasheet(PDF) - IXYS Corporation
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFK360N10T due to regional differences or acquisition. IXFK360N10T may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V