IXFY8N65X2 - IXYS

Mfr. #:
IXFY8N65X2
Description:
MOSFET 650V/8A TO-252
Lifecycle:
New from this manufacturer.
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IXFY8N65X2 Information

Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFETâ„¢
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.

Specifications

RoHS: Y
Packaging: Tube
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Manufacturer: IXYS
Brand: IXYS
Tradename: HiPerFET
Channel Mode: Enhancement
Id - Continuous Drain Current: 8 A
Factory Pack Quantity: 70
Series: 650V Ultra Junction X2
Vds - Drain-Source Breakdown Voltage: 650 V
Rds On - Drain-Source Resistance: 450 mOhms
Forward Transconductance - Min: 3.6 S
Vgs th - Gate-Source Threshold Voltage: 3 V
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 17 ns
Pd - Power Dissipation: 150 W
Fall Time: 15 ns
Rise Time: 11 ns
Qg - Gate Charge: 11 nC
Vgs - Gate-Source Voltage: 10 V
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

IXFY8N65X2 Price & Stock

IXYS IXFY8N65X2 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyIXFY8N65X2-ND-16.5414.8610.937.857.182020-02-26T13:55:30Z
Mouser747-IXFY8N65X2-19.9718.0814.5011.7711.772020-02-26T23:26:38Z
SourceabilityIXFY8N65X250-----2020-02-21T16:07:13Z
TMEIXFY8N65X214110.469.237.777.777.772020-02-26T10:40:28Z
Sierra ICIXFY8N65X2Contact-----2019-12-16T00:48:56Z

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IXFY8N65X2 MOSFET. Datasheet pdf. Equivalent
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Alternate Names

IXYS has several brands around the world that may have alternate names for IXFY8N65X2 due to regional differences or acquisition. IXFY8N65X2 may also be known as the following names:

  • IXYS CORPORATION
  • IXY
  • IXYS CORP
  • IXYS SEMICONDUCTOR
  • IXYS Integrated Circuits Division
  • IXYS Integrated Circuits/Clare
  • IXYS GMBH
  • IXYS-DIRECTED ENERGY
  • IXYS Integrated Circuits Division Inc
  • IXYS SEMICONDUCTOR GMBH
  • IXYS (VA)
  • IXYS CORPO
  • IXYS Semiconducter GmbH
  • IXYS SEMICONDUCTOR CORP
  • IXYS INTEGCIRCUITS DIV(CLARE)
  • IXYS Colorado (IXYS RF Division)
  • IXYS SEMICOND
  • IXYS Integrated Circuits
  • Zilog/IXYS
  • IXYSCOR
  • Clare/LXYS Corporation
  • IXYS-RF
  • CP CLAIRE
  • Clare (IXYS)
  • IXYS CORPORATION|V