- Mfr. #:
- IXTQ52N30P
- Description:
- MOSFET 52 Amps 300V 0.066 Ohm Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXTQ52N30P Information
parts# IXTQ52N30P is available at OMO Electronic, see description of IXTQ52N30P as below .
use the request quote form to request IXTQ52N30P price and lead time.
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The price and lead time for IXTQ52N30P depend on the quantity required, availability and warehouse location. Contact us today and our sales team will send you quotation soon.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-3P-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXTQ52N30 |
| Channel Mode: | Enhancement |
| Rds On - Drain-Source Resistance: | 66 mOhms |
| Typical Turn-Off Delay Time: | 60 ns |
| Id - Continuous Drain Current: | 52 A |
| Pd - Power Dissipation: | 400 W |
| Width: | 4.9 mm |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Factory Pack Quantity: | 30 |
| Typical Turn-On Delay Time: | 24 ns |
| Rise Time: | 22 ns |
| Height: | 20.3 mm |
| Fall Time: | 20 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Length: | 15.8 mm |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.194007 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXTQ52N30P Price & Stock
IXYS IXTQ52N30P pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | IXTQ52N30P-ND | 44 | 34.89 | 31.35 | 25.69 | 18.44 | 17.52 | 2019-11-11T13:33:16Z |
| Mouser | 747-IXTQ52N30P | 53 | 42.39 | 37.84 | 31.04 | 21.23 | 18.22 | 2019-11-02T10:32:28Z |
| J2 Sourcing | IXTQ 52N30P | 4,596 | - | - | - | - | - | 2019-10-25T13:30:02Z |
| TME | IXTQ52N30P | 199 | 71.89 | 49.71 | 49.71 | 49.71 | 49.71 | 2019-11-11T11:25:27Z |
| Dana Microsystems | IXTQ52N30P | 493 | - | - | - | - | - | 2019-10-01T16:44:51Z |
| Abacus Technologies | IXTQ52N30P | 400 | - | - | - | - | - | 2019-11-07T23:53:31Z |
| Nexxon | IXTQ52N30P | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
| North Star Micro | IXTQ52N30P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
| Sierra IC | IXTQ52N30P | Contact | - | - | - | - | - | 2019-09-03T21:05:22Z |
| SemiconductorPLUS | IXTQ52N30P | Contact | - | - | - | - | - | 2016-12-28T19:16:53Z |
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- IXTQ52N30P Datasheet | IXYS Corporation - Datasheetspdf.com
- IXTQ52N30P MOSFET. Datasheet pdf. Equivalent
- IXTQ52N30P Datasheet(PDF) - IXYS Corporation
- IXTQ52N30P - IXYS | TTI, Inc. - TTI Europe
- IXTQ52N30P by IXYS | MOSFETs | Arrow.com
Alternate Names
IXYS has several brands around the world that may have alternate names for IXTQ52N30P due to regional differences or acquisition. IXTQ52N30P may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V