- Mfr. #:
- CGHV1J006D-GP4
- Description:
- RF JFET Transistors GaN HEMT Die DC-18GHz, 6 Watt
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CGHV1J006D-GP4 Information
- GaN HEMTs
- Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Wolfspeed / Cree |
| Subcategory: | Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Product Category: | RF JFET Transistors |
| Product Type: | RF JFET Transistors |
| Transistor Polarity: | N-Channel |
| Transistor Type: | HEMT |
| Packaging: | Gel Pack |
| Product: | GaN HEMT |
| Technology: | GaN |
| Package / Case: | Die |
| Manufacturer: | Cree, Inc. |
| Length: | 840 um |
| Width: | 800 um |
| Output Power: | 6 W |
| Rds On - Drain-Source Resistance: | 2.3 Ohms |
| Gain: | 17 dB |
| Height: | 100 um |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Operating Frequency: | 10 MHz to 18 GHz |
| Factory Pack Quantity: | 10 |
| Id - Continuous Drain Current: | 0.8 A |
| Vgs th - Gate-Source Threshold Voltage: | - 3 V |
| Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V |
| NF - Noise Figure: | - |
| Typical Turn-Off Delay Time: | - |
| Rise Time: | - |
| P1dB - Compression Point: | - |
| Application: | - |
| Pd - Power Dissipation: | - |
| Development Kit: | - |
| Class: | - |
| Gate-Source Cutoff Voltage: | - |
| Maximum Drain Gate Voltage: | - |
| Minimum Operating Temperature: | - |
| Maximum Operating Temperature: | - |
| Operating Temperature Range: | - |
| Fall Time: | - |
CGHV1J006D-GP4 Price & Stock
Cree CGHV1J006D-GP4 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Mouser | 941-CGHV1J006D | 50 | - | 239.63 | 239.63 | 239.63 | 239.63 | 2020-02-18T01:01:20Z |
AD5242BRUZ1M distributor
- CGHV1J006D-GP4 - 18.0-GHz; GaN HEMT Die - Wolfspeed
- CGHV1J006D-GP4 - Discrete Semiconductor Products - Digikey
- CGHV1J006D-GP4 Datasheet - Wolfspeed / Cree - Mouser ...
- CGHV1J006D-GP4 by Wolfspeed | RF FETs | Arrow.com
- Wolfspeed, A Cree Company - CGHV1J006D-GP4
- CGHV1J006D-GP4
- CGHV1J006D-GP4 Price & Stock | DigiPart
- CGHV1J006D-GP4 | Wolfspeed | Transistors - FETs, MOSFETs - RF ...
- CGHV1J006D-GP4 Datasheet(PDF) - Cree/Wolfspeed
- CGHV1J006D-GP4 - RF JFET Transistors - Semikart.com
Alternate Names
Cree has several brands around the world that may have alternate names for CGHV1J006D-GP4 due to regional differences or acquisition. CGHV1J006D-GP4 may also be known as the following names:
- CREE INC
- CREE INCORPORATED
- CRE
- Cree LED Lighting
- CREE LTD
- CREE PWR
- DIGI-KEY/CREE
- Cree Asia-Pacific Ltd
- CREE ASIA PACIFIC
- CREE INC (VA)
- Cree Research Inc
- Cree Microwave
- CREE(RoHS)
- CREE/M
- CREE POWER
- Cree Inc.