SIHH26N60E-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIHH26N60E-T1-GE3
Description:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIHH26N60E-T1-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Package / Case: PowerPAK-8x8-4
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Typical Turn-Off Delay Time: 80 ns
Qg - Gate Charge: 77 nC
Vds - Drain-Source Breakdown Voltage: 600 V
Rise Time: 54 ns
Fall Time: 45 ns
Vgs th - Gate-Source Threshold Voltage: 4 V
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Typical Turn-On Delay Time: 28 ns
Id - Continuous Drain Current: 25 A
Pd - Power Dissipation: 202 W
Rds On - Drain-Source Resistance: 117 mOhms
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHH26N60E-T1-GE3 Price & Stock

Vishay SIHH26N60E-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIHH26N60E-T1-GE3CT-ND3,1197.666.895.213.963.962020-02-29T13:52:18Z
Digi-KeySIHH26N60E-T1-GE3DKR-ND3,1197.666.895.213.963.962020-02-29T13:52:18Z
Digi-KeySIHH26N60E-T1-GE3TR-ND3,000----3.792020-02-29T13:52:18Z
Mouser78-SIHH26N60E-T1-GE32,9757.666.675.483.933.932020-02-28T22:21:34Z
RS Components 21242251-8.508.508.245.725.322020-02-29T19:18:30Z
RS Components1242251P---8.245.725.322020-02-29T19:18:30Z
AvnetSIHH26N60E-T1-GE3-----3.972020-02-29T04:03:43Z
TTISIHH26N60E-T1-GE3------2020-02-29T09:25:55Z
Farnell 22526617-7.665.724.733.293.292020-02-29T02:51:08Z
Farnell2526617RL--5.724.733.293.292020-02-29T02:51:08Z
Newark76Y1445-----4.422020-02-29T03:43:50Z
Avnet EuropeSIHH26N60E-T1-GE3-----4.632020-03-01T08:08:33Z
Ameya360SIHH26N60E-T1-GE3-----4.462020-02-28T06:24:20Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHH26N60E-T1-GE3 due to regional differences or acquisition. SIHH26N60E-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.