MR0A16ACYS35 - Everspin Technologies

Mfr. #:
MR0A16ACYS35
Description:
NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM
Lifecycle:
New from this manufacturer.
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MR0A16ACYS35 Information

Magnetoresistive Random Access Memory (MRAM)
Everspin Technologies Magnetoresistive Random Access Memory (MRAM) uses a 1 Transistor – 1 Magnetic Tunnel Junction (1T-1MTJ) architecture. These MRAM devices offer significantly long Data Retention (20+ years) and unlimited endurance. The data is automatically protected on power loss by low-voltage inhibit circuitry to prevent writes with voltage out of specification.
Everspin MRAM
MR0A08B / MR0D08B / MR0A16A 1Mb Parallel MRAM
Everspin Technologies MR0A08B, MR0D08B, and MR0A16A are 1,048,576-bit magnetoresistive random access memory (MRAM) devices. The Everspin MRAM devices are available in a variety of specifications, such as dual supply, serial SPI, and organized as 131,072 words of 8 bits or 65,536 words of 16 bits. These MRAM devices are as fast 35ns or 45ns read/write timing cycles with no write delays and unlimited read/write endurance. 

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Tray
Package / Case: TSOP-44
Mounting Style: SMD/SMT
Interface Type: Parallel
Product Category: NVRAM
Product Type: NVRAM
Subcategory: Memory & Data Storage
Series: MR0A16A
Brand: Everspin Technologies
Manufacturer: Everspin Technologies
Organization: 64 k x 16
Access Time: 35 ns
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 3 V
Data Bus Width: 16 bit
Factory Pack Quantity: 135
Operating Supply Current: 105 mA
Memory Size: 1 Mbit
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C

MR0A16ACYS35 Price & Stock

Freescale Semiconductor MR0A16ACYS35 pricing and available inventory.

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Alternate Names

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