- Mfr. #:
- IXFH35N30
- Description:
- MOSFET 300V 35A
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFH35N30 Information
- HiPerFET™ Power MOSFETs
- IXYS Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Specifications
| RoHS: | Y |
|---|---|
| Packaging: | Tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Configuration: | Single |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Type: | MOSFET |
| Product Category: | MOSFET |
| Manufacturer: | IXYS |
| Brand: | IXYS |
| Series: | IXFH35N30 |
| Tradename: | HyperFET |
| Channel Mode: | Enhancement |
| Typical Turn-Off Delay Time: | 75 ns |
| Rise Time: | 60 ns |
| Width: | 5.3 mm |
| Fall Time: | 45 ns |
| Id - Continuous Drain Current: | 35 A |
| Pd - Power Dissipation: | 300 W |
| Vds - Drain-Source Breakdown Voltage: | 300 V |
| Factory Pack Quantity: | 30 |
| Forward Transconductance - Min: | 25 S |
| Height: | 21.46 mm |
| Typical Turn-On Delay Time: | 20 ns |
| Vgs - Gate-Source Voltage: | 20 V |
| Length: | 16.26 mm |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Transistor Type: | 1 N-Channel |
| Number of Channels: | 1 Channel |
| Unit Weight: | 0.229281 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
IXFH35N30 Price & Stock
IXYS IXFH35N30 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| NetroFlash | IXFH35N30 | 1,835 | - | - | - | - | - | 2020-03-02T23:12:20Z |
| Resion | IXFH35N30 | 4 | - | - | - | - | - | 2019-04-10T15:52:26Z |
| Classic Components | IXFH35N30 | 2 | - | - | - | - | - | 2020-03-11T22:08:19Z |
| Dana Microsystems | IXFH35N30 | 1,683 | - | - | - | - | - | 2020-03-11T20:03:08Z |
| Nexxon | IXFH35N30 | Contact | - | - | - | - | - | 2018-02-27T00:44:39Z |
| North Star Micro | IXFH35N30 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
| TransparentC | IXFH35N30 | Contact | - | - | - | - | - | 2016-01-28T17:08:50Z |
AD5242BRUZ1M distributor
- IXFH35N30 IXYS | Mouser
- HiPerFETTM Power MOSFETs
- IXFH35N30 IXYS | Discrete Semiconductor Products | DigiKey
- IXFH35N30 MOSFET. Datasheet pdf. Equivalent
- IXFH35N30 IXYS - MOSFETs - Distributors, Price Comparison ...
- IXFH35N30 MOSFET. Datasheet pdf. Equivalent
- IXFH35N30 IXYS - Transistor: N-MOSFET | 300V; 35A; 298W ...
- IXFH35N30 datasheet - HiperFET (tm) Power MOSFETs N ...
- IXFH35N30 Datasheet(PDF) - IXYS Corporation
- IXFH35N30 – IXYS Corporation – FETs - Single - Global ...
Alternate Names
IXYS has several brands around the world that may have alternate names for IXFH35N30 due to regional differences or acquisition. IXFH35N30 may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V