NTHL082N65S3F - ON Semiconductor

Mfr. #:
NTHL082N65S3F
Description:
MOSFET SUPERFET3 650V TO247 N-CHANNEL
Lifecycle:
New from this manufacturer.
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NTHL082N65S3F Information

Solutions for Energy Infrastructure
ON Semiconductor Solutions for Energy Infrastructure address the landscape for energy generation, distribution, and storage that is rapidly evolving to fulfill targets set by government policy and increasing consumption. Heightened efficiency targets, reductions of CO2 emissions, and a focus on renewable and clean energy are key factors in this Energy Infrastructure Evolution. ON Semiconductor offers a comprehensive portfolio of energy efficient solutions to serve the demanding needs of high-power applications including Silicon Carbide (SiC) Diodes, Intelligent Power Modules, and Current Sense Amplifiers.
SuperFET® III MOSFETs
ON Semiconductor SuperFET® III MOSFETs are high voltage (700V at TJ = 150ºC) super-junction (SJ) MOSFETs with charge balance technology. This technology provides outstanding low on-resistance (59mΩ or 62mΩ RDS(on) typical) and lower gate charge performance (78nC Qg typical). SuperFET III MOSFETs are designed to minimize conduction loss, offer superior switching performance, and withstand extreme rise rate of the drain-source voltage (dv/dt). Fairchild SuperFET III is ideal for various power systems for miniaturization and higher efficiency.

Specifications

RoHS: Y
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-247-3
Series: SuperFET3
Tradename: SuperFET III
Configuration: Single
Technology: Si
Brand: ON Semiconductor
Manufacturer: ON Semiconductor
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Qg - Gate Charge: 81 nC
Typical Turn-Off Delay Time: 79 ns
Rds On - Drain-Source Resistance: 70 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Fall Time: 5 ns
Factory Pack Quantity: 450
Id - Continuous Drain Current: 40 A
Pd - Power Dissipation: 313 W
Vgs - Gate-Source Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Rise Time: 27 ns
Typical Turn-On Delay Time: 27 ns
Forward Transconductance - Min: 24 S
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

NTHL082N65S3F Price & Stock

ON Semiconductor NTHL082N65S3F pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyNTHL082N65S3FOS-ND30238.6934.7528.4720.4420.442019-11-14T13:34:11Z
RS Components 31728790340---25.8625.862019-11-15T15:02:45Z
RS Components1728980--34.0229.1628.0828.082019-11-15T15:02:45Z
RS Components1728980P--34.0229.1628.0828.082019-11-15T15:02:45Z
Mouser863-NTHL082N65S3F2,76738.6232.8028.4520.3917.592019-11-11T16:05:14Z
element14 APAC283559325138.2332.4728.1723.9423.942019-11-15T02:02:16Z
Arrow ElectronicsNTHL082N65S3F43836.9931.9427.5519.8319.832019-11-08T23:12:49Z
VericalNTHL082N65S3F438-31.9427.5519.8319.832019-11-08T23:12:49Z
AvnetNTHL082N65S3F----18.9618.032019-11-15T02:26:35Z
Farnell283559325140.7834.6330.0228.5828.582019-11-15T02:35:46Z
Newark48AC173525138.6232.8028.4524.1824.182019-11-11T16:05:19Z
Avnet EuropeNTHL082N65S3F-26.4923.8421.4521.4521.452019-11-15T07:33:47Z
Wuhan P&SNTHL082N65S3F6582.4282.4282.4239.8839.882019-11-15T08:03:59Z
SourceabilityNTHL082N65S3F115-----2019-11-11T17:37:31Z
Florida CircuitNTHL082N65S3F167-----2019-11-01T14:02:11Z
Abacus TechnologiesNTHL082N65S3F908-----2019-11-14T23:53:16Z
Sierra ICNTHL082N65S3FContact-----2019-09-03T21:05:22Z

AD5242BRUZ1M distributor

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