CSD86360Q5D Information

NexFET™ Power MOSFETs

Texas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. Texas Instruments NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Power Block TI NexFET

NexFET Power Block ICs

Texas Instruments NexFET Power Block ICs are optimized driver ICs with Dual NexFET MOSFETs used in the devices. This delivers higher efficiency in a typical high current POL design. These devices use half the PCB area versus other discrete 3x3 QFN package MOSFETs which improves power density. With ultra-low Qg & Qgd these devices enable a higher switching frequency with up to double frequency for same power loss versus competitor's devices. This provides improved transient response for less output capacitors that will be needed. There is a reduction in size, by up to 1/2, for the output filter (caps & inductor). They come with a unique ground pad lead frame and pinout which simplifies the customers layout and improves operating and thermal performance.

Specifications

CSD86360Q5D Price & Stock

Texas Instruments CSD86360Q5D pricing and available inventory.

AD5242BRUZ1M distributor

Alternate Names

Texas Instruments has several brands around the world that may have alternate names for CSD86360Q5D due to regional differences or acquisition. CSD86360Q5D may also be known as the following names: