SIHB22N60AE-GE3 - Vishay / Siliconix

Mfr. #:
SIHB22N60AE-GE3
Description:
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
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Purchase

SIHB22N60AE-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Vds - Drain-Source Breakdown Voltage: 650 V
Qg - Gate Charge: 48 nC
Typical Turn-Off Delay Time: 45 ns
Vgs th - Gate-Source Threshold Voltage: 4 V
Rise Time: 33 ns
Vgs - Gate-Source Voltage: 30 V
Fall Time: 21 ns
Id - Continuous Drain Current: 20 A
Typical Turn-On Delay Time: 19 ns
Pd - Power Dissipation: 179 W
Rds On - Drain-Source Resistance: 156 mOhms
Factory Pack Quantity: 1000
Number of Channels: 1 Channel
Unit Weight: 0.077603 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB22N60AE-GE3 Price & Stock

Vishay SIHB22N60AE-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB22N60AE-GE3-ND1,00026.1123.4617.7413.5012.122020-03-21T13:09:08Z
Mouser78-SIHB22N60AE-GE31,00027.3222.9919.3714.0514.052020-03-20T21:39:50Z
AvnetSIHB22N60AE-GE3----14.3512.642020-03-21T01:42:32Z
TTISIHB22N60AE-GE3------2020-03-21T07:31:07Z
Newark20AC3797----13.5512.562020-03-21T02:43:48Z
SourceabilitySIHB22N60AE-GE31,000-----2020-03-03T19:24:07Z

AD5242BRUZ1M distributor

SIHB22N60AE-GE3 Vishay Siliconix - Digikey
SIHB22N60AE-GE3 Vishay Semiconductors | Mouser
SiHB22N60AE E Series Power MOSFET - Vishay
SIHB22N60AE-GE3 Vishay - MOSFETs - Distributors and Price ...
SIHB22N60AE-GE3 by Vishay MOSFETs | Avnet Asia Pacific
SIHB22N60AE-GE3 - VISHAY | X-ON
Transistors - FETs, MOSFETs - Single -- SIHB22N60AE-GE3-ND
SIHB22N60S-GE3 Price & Stock | DigiPart
SIHB22N60AE MOSFET. Datasheet pdf. Equivalent
Electro-Films (EFI) / Vishay - Micro-Semiconductor.com

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB22N60AE-GE3 due to regional differences or acquisition. SIHB22N60AE-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.