VS-GB100TH120N - Vishay Semiconductors

Mfr. #:
VS-GB100TH120N
Description:
IGBT Modules Output & SW Modules - DIAP IGBT
Lifecycle:
New from this manufacturer.
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VS-GB100TH120N Information

OMO is specialized in sourcing hard-to-find and obsolete parts. we have stock of VS-GB100TH120N at omo-ic.com. Email us to get the newest quotation lead time and stock availability.

Specifications

Brand: Vishay Semiconductors
Manufacturer: Vishay
Package / Case: INT-A-PAK
Subcategory: IGBTs
Product Category: IGBT Modules
Product Type: IGBT Modules
Configuration: Half Bridge
Mounting Style: Chassis Mount
Pd - Power Dissipation: 833 W
Gate-Emitter Leakage Current: 400 nA
Continuous Collector Current at 25 C: 200 A
Maximum Gate Emitter Voltage: 20 V
Factory Pack Quantity: 12
Collector-Emitter Saturation Voltage: 1.9 V
Collector- Emitter Voltage VCEO Max: 1.2 kV
Maximum Operating Temperature: + 150 C

VS-GB100TH120N Price & Stock

Vishay Semiconductor VS-GB100TH120N pricing and available inventory.

AD5242BRUZ1M distributor

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VS-GB100TH120N datasheet
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Alternate Names

Vishay Semiconductor has several brands around the world that may have alternate names for VS-GB100TH120N due to regional differences or acquisition. VS-GB100TH120N may also be known as the following names:

  • GENERAL SEMICONDUCTOR
  • VISHAY GENERAL SEMICONDUCTOR
  • GEN SEMI
  • Vishay Semiconductor Diodes Division
  • VISHAY SEMICONDUCTORS
  • Vishay Semiconductor Opto Division
  • General Semiconductor / Vishay
  • VishaySem
  • VISHAY - GENERAL SEMI
  • VISHAY SEMI
  • GEN SEMI/VISHAY
  • VISHAY/GENERAL SEMICONDUCT0R
  • VISHAY SE
  • VISHAY SEMICONDUCTOR DIOD
  • VISHAY SEMICONDUCTOR PDD
  • VISHAYSEMICOND
  • VISHAY SEMICONDUCTOR SSP OPTO
  • VISHAY SEMICONDUCTOR ITALIANA
  • Vishay General Semiconductors