- Mfr. #:
- SIA527DJ-T1-GE3
- Description:
- MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
SIA527DJ-T1-GE3 Information
- Integrated MOSFET Solutions
- Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.
- N & P Channel Pair Thermally Enhanced MOSFETs
- Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.
Specifications
| RoHS: | Y |
|---|---|
| Brand: | Vishay / Siliconix |
| Manufacturer: | Vishay |
| Tradename: | TrenchFET |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Series: | SIA |
| Packaging: | Reel |
| Package / Case: | PowerPAK-SC70-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Vgs - Gate-Source Voltage: | 8 V |
| Pd - Power Dissipation: | 7.8 W |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Id - Continuous Drain Current: | 4.5 A |
| Factory Pack Quantity: | 3000 |
| Rds On - Drain-Source Resistance: | 29 mOhms, 41 mOhms |
| Typical Turn-Off Delay Time: | 22 ns, 32 ns |
| Forward Transconductance - Min: | 21 S, 12 S |
| Width: | 2.05 mm |
| Length: | 2.05 mm |
| Number of Channels: | 2 Channel |
| Qg - Gate Charge: | 15 nC, 26 nC |
| Vds - Drain-Source Breakdown Voltage: | 12 V |
| Typical Turn-On Delay Time: | 10 ns, 22 ns |
| Rise Time: | 10 ns, 22 ns |
| Fall Time: | 10 ns, 15 ns |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Height: | 0.75 mm |
| Unit Weight: | 0.000988 oz |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
SIA527DJ-T1-GE3 Price & Stock
Vishay SIA527DJ-T1-GE3 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Digi-Key | SIA527DJ-T1-GE3CT-ND | 11,563 | 3.76 | 3.23 | 2.24 | 1.42 | 1.42 | 2020-03-03T14:11:33Z |
| Digi-Key | SIA527DJ-T1-GE3DKR-ND | 11,563 | 3.76 | 3.23 | 2.24 | 1.42 | 1.42 | 2020-03-03T14:11:33Z |
| Digi-Key | SIA527DJ-T1-GE3TR-ND | 9,000 | - | - | - | - | 1.17 | 2020-03-03T14:11:33Z |
| Avnet | SIA527DJ-T1-GE3 | 6,000 | - | - | - | - | 1.19 | 2020-03-04T03:47:28Z |
| Mouser | 78-SIA527DJ-T1-GE3 | 6,467 | 3.90 | 3.15 | 2.31 | 1.46 | 1.30 | 2020-03-03T00:15:16Z |
| Verical | SIA527DJ-T1-GE3 | 3,404 | - | - | 2.10 | 1.35 | 1.25 | 2020-03-03T17:49:23Z |
| Arrow Electronics | SIA527DJ-T1-GE3 | 3,404 | 3.33 | 2.87 | 2.10 | 1.35 | 1.25 | 2020-03-03T17:32:53Z |
| TTI | SIA527DJ-T1-GE3 | - | - | - | - | - | - | 2020-03-04T07:28:08Z |
| Newark | 38AH2301 | 3,000 | - | - | - | - | 1.48 | 2020-03-04T03:58:46Z |
| Newark | 67X6801 | - | - | - | - | - | 1.30 | 2020-03-04T03:58:46Z |
| Avnet Europe | SIA527DJ-T1-GE3 | - | - | - | - | - | 1.40 | 2020-03-04T08:31:06Z |
| LTL Group | 4285018 | 61 | - | - | - | - | - | 2020-03-04T05:52:29Z |
| SPEC | SIA527DJ-T1-GE3 | 50 | - | - | - | - | - | 2020-02-26T16:02:45Z |
| Classic Components | SIA527DJ-T1-GE3 | 39 | - | - | - | - | - | 2020-02-28T00:54:13Z |
| North Star Micro | SIA527DJ-T1-GE3 | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
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- SIA527DJ-T1-GE3 by Vishay MOSFET Arrays | Avnet
- vishay sia527dj-t1-ge3 - Dual MOSFETs
- SIA527DJ-T1-GE3 Vishay - Datasheet PDF & Technical Specs
- SIA527DJ-T1-GE3 - VISHAY | X-ON
- SIA527DJ-T1-GE3 - Vishay - Dual MOSFET, N and P Channel, 12 V
- SIA527DJ-T1-GE3 footprint & symbol by Vishay Siliconix
Alternate Names
Vishay has several brands around the world that may have alternate names for SIA527DJ-T1-GE3 due to regional differences or acquisition. SIA527DJ-T1-GE3 may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- VISHAY THIN FILM
- VISHAY INTERTECHNOLOGY
- VISHY
- VISAHY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY ELECTRONIC
- VSHAY
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY AMERICAS
- VISHAY ELECTRO-FILMS
- VISHAY COMPONENTS
- Vishay Semiconductors
- VISHAY COMPONENTS NEDERLAND
- VISHAY INTERTEC
- VISHAY FOIL RESISTORS / VPG
- VISHAY OPTO
- Vishay Intertechnology Inc.