SIHB20N50E-GE3 - Vishay / Siliconix

Mfr. #:
SIHB20N50E-GE3
Description:
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIHB20N50E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-263-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Packaging: Bulk
Width: 9.65 mm
Vds - Drain-Source Breakdown Voltage: 550 V
Typical Turn-Off Delay Time: 48 ns
Qg - Gate Charge: 46 nC
Height: 4.83 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 30 V
Rise Time: 27 ns
Fall Time: 25 ns
Id - Continuous Drain Current: 19 A
Rds On - Drain-Source Resistance: 184 mOhms
Pd - Power Dissipation: 179 W
Typical Turn-On Delay Time: 17 ns
Factory Pack Quantity: 1000
Length: 10.67 mm
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHB20N50E-GE3 Price & Stock

Vishay SIHB20N50E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHB20N50E-GE3-ND99521.9419.6814.8911.3310.172020-03-13T13:03:17Z
Mouser78-SIHB20N50E-GE32,49121.9419.3415.9111.5611.562020-03-13T22:00:12Z
element14 APAC 22470778212.0412.0412.0412.0412.042020-03-14T02:32:31Z
element14 APAC2471939-22.8920.1916.6112.0711.132020-03-14T02:32:31Z
AvnetSIHB20N50E-GE3----12.0410.602020-03-14T03:37:25Z
TTISIHB20N50E-GE3------2020-03-14T07:31:27Z
Farnell 22471939823.0518.2313.8410.3210.322020-03-14T01:50:32Z
Farnell2471939RL--18.2313.8410.3210.322020-03-14T01:50:32Z
Newark 238Y8547----13.0410.792020-03-14T03:17:22Z
Newark38Y8546------2020-03-14T03:17:22Z
Avnet EuropeSIHB20N50E-GE3---14.1211.8511.852020-03-14T08:19:41Z
NexxonSIHB20N50E-GE3Contact-----2018-02-27T00:44:39Z

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FDB20N50F vs SIHB20N50E-GE3 Comparison - Utmel

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHB20N50E-GE3 due to regional differences or acquisition. SIHB20N50E-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.