SIHD6N62E-GE3 - Vishay / Siliconix

Mfr. #:
SIHD6N62E-GE3
Description:
MOSFET 620V Vds 30V Vgs DPAK (TO-252)
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIHD6N62E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Package / Case: TO-252-3
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Packaging: Bulk
Rds On - Drain-Source Resistance: 900 mOhms
Pd - Power Dissipation: 78 W
Vds - Drain-Source Breakdown Voltage: 620 V
Id - Continuous Drain Current: 6 A
Vgs th - Gate-Source Threshold Voltage: 4 V
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Typical Turn-Off Delay Time: 22 ns
Qg - Gate Charge: 17 nC
Fall Time: 16 ns
Typical Turn-On Delay Time: 12 ns
Rise Time: 10 ns
Number of Channels: 1 Channel
Unit Weight: 0.050717 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHD6N62E-GE3 Price & Stock

Vishay SIHD6N62E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHD6N62E-GE3-ND3,08912.1410.877.745.344.792019-12-05T14:01:16Z
Mouser78-SIHD6N62E-GE34,04812.1410.268.225.154.892019-12-04T22:16:49Z
Arrow ElectronicsSIHD6N62E-GE32,97011.059.547.835.094.812019-12-06T15:55:35Z
VericalSIHD6N62E-GE32,970-9.547.835.094.812019-12-06T18:10:53Z
AvnetSIHD6N62E-GE3-----5.202019-12-06T04:29:54Z
element14 APAC2400378-13.5012.109.446.155.462019-12-06T02:16:26Z
TTISIHD6N62E-GE3------2019-12-06T07:21:56Z
Farnell2400378--11.938.735.525.142019-12-06T02:47:48Z
Avnet EuropeSIHD6N62E-GE3-----6.052019-12-06T08:24:18Z

AD5242BRUZ1M distributor

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Vishay Siliconix SIHD6N62E-GE3 - Easybom
Sep 23, 2021
SIHD6N62E-GE3 Vishay, Power MOSFET, N Channel, 620 V

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHD6N62E-GE3 due to regional differences or acquisition. SIHD6N62E-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.