SIHP12N50E-GE3 - Vishay / Siliconix

Mfr. #:
SIHP12N50E-GE3
Description:
MOSFET 500V Vds 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIHP12N50E-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Vds - Drain-Source Breakdown Voltage: 500 V
Factory Pack Quantity: 50
Width: 4.7 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Rds On - Drain-Source Resistance: 380 mOhms
Vgs - Gate-Source Voltage: 30 V
Typical Turn-Off Delay Time: 29 ns
Qg - Gate Charge: 25 nC
Rise Time: 16 ns
Height: 15.49 mm
Typical Turn-On Delay Time: 13 ns
Fall Time: 12 ns
Pd - Power Dissipation: 114 W
Id - Continuous Drain Current: 10.5 A
Length: 10.41 mm
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHP12N50E-GE3 Price & Stock

Vishay SIHP12N50E-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
element14 APAC247194237212.9510.989.016.365.842020-03-21T02:36:24Z
VericalSIHP12N50E-GE31,000-10.138.095.865.532020-03-20T17:59:59Z
Arrow ElectronicsSIHP12N50E-GE31,00011.7210.138.095.865.532020-03-20T17:10:33Z
Digi-KeySIHP12N50E-GE3-ND-12.5611.288.305.965.452020-03-20T12:56:08Z
Avnet 238Y8550-12.9910.648.028.028.022020-03-21T01:42:32Z
AvnetSIHP12N50E-GE3----6.205.462020-03-21T01:42:32Z
Mouser78-SIHP12N50E-GE3-12.5610.648.736.175.752020-03-20T21:39:50Z
TTISIHP12N50E-GE3------2020-03-21T07:31:07Z
Farnell2471942372-9.017.144.664.592020-03-21T01:51:18Z
Newark38Y8550----6.265.582020-03-21T02:43:48Z
Avnet EuropeSIHP12N50E-GE3---7.556.336.332020-03-21T07:46:48Z
Ameya360SIHP12N50E-GE330---6.366.362020-03-20T03:22:21Z
SourceabilitySIHP12N50E-GE330-----2020-03-03T19:24:07Z
C Plus ElectronicsSIHP12N50E-GE3Contact-----2018-05-06T19:06:36Z

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SIHP12N50E-GE3 datasheet - Power MOSFET, N Channel ...

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHP12N50E-GE3 due to regional differences or acquisition. SIHP12N50E-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.