SIHP24N65E-E3 - Vishay / Siliconix

Mfr. #:
SIHP24N65E-E3
Description:
MOSFET 650V Vds 30V Vgs TO-220AB
Lifecycle:
New from this manufacturer.
Delivery
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Payment
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Purchase

SIHP24N65E-E3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Series: E
Rise Time: 84 ns
Qg - Gate Charge: 81 nC
Typical Turn-Off Delay Time: 70 ns
Fall Time: 69 ns
Vds - Drain-Source Breakdown Voltage: 650 V
Factory Pack Quantity: 50
Width: 4.7 mm
Vgs th - Gate-Source Threshold Voltage: 4 V
Vgs - Gate-Source Voltage: 30 V
Pd - Power Dissipation: 250 W
Typical Turn-On Delay Time: 24 ns
Id - Continuous Drain Current: 24 A
Height: 15.49 mm
Rds On - Drain-Source Resistance: 145 mOhms
Length: 10.41 mm
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHP24N65E-E3 Price & Stock

Vishay SIHP24N65E-E3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeySIHP24N65E-E3-ND89237.8233.9825.7019.5619.282020-01-03T13:53:44Z
Mouser781-SIHP24N65E-E31,00037.8232.1127.4419.9219.922020-01-03T21:32:22Z
AvnetSIHP24N65E-E3----20.7818.312020-01-04T03:43:12Z
TTISIHP24N65E-E3------2020-01-04T09:27:32Z
Farnell207977460315.4015.4015.4015.4015.402020-01-04T02:50:29Z
Abacus TechnologiesSIHP24N65E-E316,262-----2019-12-06T00:07:36Z
North Star MicroSIHP24N65E-E3Contact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

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SIHP24N65E-E3 Price & Stock | DigiPart
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SIHP24N65E-E3 datasheet - Power MOSFET, N Channel, 650 ...
SIHP24N65E-E3 Datasheet PDF - DatasheetQ.com
SIHP24N65E-E3 - VISHAY | X-ON

Alternate Names

Vishay has several brands around the world that may have alternate names for SIHP24N65E-E3 due to regional differences or acquisition. SIHP24N65E-E3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.