- Mfr. #:
- CGH60120D-GP4
- Description:
- RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
CGH60120D-GP4 Information
- GaN HEMTs
- Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Specifications
Moisture Sensitive: | Yes |
---|---|
RoHS: | Y |
Packaging: | Tray |
Subcategory: | Transistors |
Configuration: | Single |
Mounting Style: | SMD/SMT |
Product Category: | RF JFET Transistors |
Product Type: | RF JFET Transistors |
Manufacturer: | Qorvo |
Brand: | Qorvo |
Technology: | GaN SiC |
Length: | 9.652 mm |
Factory Pack Quantity: | 50 |
Width: | 5.842 mm |
Pd - Power Dissipation: | 45 W |
Height: | 4.064 mm |
Vds - Drain-Source Breakdown Voltage: | 32 V |
Part # Aliases: | 1092444 |
Vgs - Gate-Source Breakdown Voltage: | 100 V |
Gate-Source Cutoff Voltage: | - 2.9 V |
CGH60120D-GP4 Price & Stock
Cree CGH60120D-GP4 pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Mouser | 941-CGH60120D | 30 | - | 1216.74 | 1216.74 | 1216.74 | 1216.74 | 2020-02-14T21:44:59Z |
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Alternate Names
Cree has several brands around the world that may have alternate names for CGH60120D-GP4 due to regional differences or acquisition. CGH60120D-GP4 may also be known as the following names:
- CREE INC
- CREE INCORPORATED
- CRE
- Cree LED Lighting
- CREE LTD
- CREE PWR
- DIGI-KEY/CREE
- Cree Asia-Pacific Ltd
- CREE ASIA PACIFIC
- CREE INC (VA)
- Cree Research Inc
- Cree Microwave
- CREE(RoHS)
- CREE/M
- CREE POWER
- Cree Inc.