Mfr. #:
CGH60120D-GP4
Description:
RF JFET Transistors GaN HEMT Die DC-6.0GHz, 120 Watt
Lifecycle:
New from this manufacturer.
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CGH60120D-GP4 Information

GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Packaging: Tray
Subcategory: Transistors
Configuration: Single
Mounting Style: SMD/SMT
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Manufacturer: Qorvo
Brand: Qorvo
Technology: GaN SiC
Length: 9.652 mm
Factory Pack Quantity: 50
Width: 5.842 mm
Pd - Power Dissipation: 45 W
Height: 4.064 mm
Vds - Drain-Source Breakdown Voltage: 32 V
Part # Aliases: 1092444
Vgs - Gate-Source Breakdown Voltage: 100 V
Gate-Source Cutoff Voltage: - 2.9 V

CGH60120D-GP4 Price & Stock

Cree CGH60120D-GP4 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser941-CGH60120D30-1216.741216.741216.741216.742020-02-14T21:44:59Z

AD5242BRUZ1M distributor

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Alternate Names

Cree has several brands around the world that may have alternate names for CGH60120D-GP4 due to regional differences or acquisition. CGH60120D-GP4 may also be known as the following names:

  • CREE INC
  • CREE INCORPORATED
  • CRE
  • Cree LED Lighting
  • CREE LTD
  • CREE PWR
  • DIGI-KEY/CREE
  • Cree Asia-Pacific Ltd
  • CREE ASIA PACIFIC
  • CREE INC (VA)
  • Cree Research Inc
  • Cree Microwave
  • CREE(RoHS)
  • CREE/M
  • CREE POWER
  • Cree Inc.