CDM22011-600LRFP SL - Central Semiconductor

Mfr. #:
CDM22011-600LRFP SL
Description:
MOSFET N-Ch 11A PFC FET 600V 4.45nC 0.3Ohm
Lifecycle:
New from this manufacturer.
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CDM22011-600LRFP SL Information

CDMxx Silicon N-Channel Power MOSFETs
Central Semiconductor CDMxx Silicon N-Channel Power MOSFETs are designed for high voltage, fast switching applications like Power Factor Correction (PFC), lighting and power inverters. These MOSFETs combine high voltage capability with low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency.Learn More
CxxDM Surface Mount Enhancement-Mode MOSFETs
Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs are designed for high speed pulsed amplifier and driver applications. Central Semiconductor CxxDM Surface Mount Enhancement-Mode MOSFETs offer a very low rDS(ON) and low threshold voltage. The CMLDM5757 consists of dual P-channel enhancement-mode silicon MOSFETs. The CMLDM3757 consists of complementary N-channel and P-channel enhancement-mode silicon MOSFETs. The CMPDM7002AHC is a high current version of the 2N7002A enhancement-mode N-channel MOSFET. And the CEDM7001 is an N-channel enhancement-mode silicon MOSFET, manufactured with the N-channel DMOS process. CEDM8004VL is a P-Channel Enhancement-mode MOSFET, manufactured by the P-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. CEDM7004VL is an N-Channel Enhancement-mode MOSFET, manufactured by the N-Channel DMOS process, designed for high speed pulsed amplifier and driver applications. Learn more

Specifications

RoHS: Y
Tradename: UltraMOS
Packaging: Tube
Mounting Style: Through Hole
Package / Case: TO-220FP-3
Configuration: Single
Technology: Si
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Channel Mode: Enhancement
Brand: Central Semiconductor
Manufacturer: Central Semiconductor
Series: CDM
Factory Pack Quantity: 700
Vds - Drain-Source Breakdown Voltage: 600 V
Typical Turn-Off Delay Time: 37 ns
Rds On - Drain-Source Resistance: 300 mOhms
Vgs - Gate-Source Voltage: 30 V
Rise Time: 27 ns
Pd - Power Dissipation: 25 W
Qg - Gate Charge: 23.05 nC
Fall Time: 23 ns
Vgs th - Gate-Source Threshold Voltage: 2 V
Typical Turn-On Delay Time: 11 ns
Id - Continuous Drain Current: 11 A
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.211644 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

CDM22011-600LRFP SL Price & Stock

Central Semiconductor CDM22011-600LRFP SL pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-KeyCDM22011-600LRFPSL-ND59515.5313.9410.268.688.682020-01-04T13:51:23Z
Mouser610-CDM22011600LRFPS63514.8413.1610.527.667.102020-01-03T21:32:22Z

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Alternate Names

Central Semiconductor has several brands around the world that may have alternate names for CDM22011-600LRFP SL due to regional differences or acquisition. CDM22011-600LRFP SL may also be known as the following names:

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  • CEN
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