- Mfr. #:
- IXFN20N120P
- Description:
- MOSFET 20 Amps 1200V 0.6 Rds
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IXFN20N120P Information
- Electrical Vehicle DC Fast Chargers
- DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Specifications
RoHS: | Y |
---|---|
Packaging: | Tube |
Configuration: | Single |
Technology: | Si |
Package / Case: | SOT-227-4 |
Type: | Polar Power MOSFET HiPerFET |
Transistor Polarity: | N-Channel |
Subcategory: | MOSFETs |
Product Type: | MOSFET |
Product Category: | MOSFET |
Manufacturer: | IXYS |
Brand: | IXYS |
Series: | IXFN20N120 |
Tradename: | HiPerFET |
Channel Mode: | Enhancement |
Mounting Style: | Chassis Mount |
Typical Turn-Off Delay Time: | 72 ns |
Fall Time: | 70 ns |
Vgs th - Gate-Source Threshold Voltage: | 6.5 V |
Pd - Power Dissipation: | 595 W |
Rds On - Drain-Source Resistance: | 570 mOhms |
Typical Turn-On Delay Time: | 49 ns |
Rise Time: | 45 ns |
Length: | 38.23 mm |
Vgs - Gate-Source Voltage: | 30 V |
Width: | 25.42 mm |
Id - Continuous Drain Current: | 20 A |
Qg - Gate Charge: | 193 nC |
Height: | 12.22 mm |
Forward Transconductance - Min: | 10 S |
Factory Pack Quantity: | 10 |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Unit Weight: | 1.058219 oz |
Transistor Type: | 1 N-Channel |
Number of Channels: | 1 Channel |
Minimum Operating Temperature: | - 55 C |
Maximum Operating Temperature: | + 150 C |
IXFN20N120P Price & Stock
IXYS IXFN20N120P pricing and available inventory.
Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
---|---|---|---|---|---|---|---|---|
Digi-Key | IXFN20N120P-ND | - | - | 256.54 | 256.54 | 256.54 | 256.54 | 2020-01-01T13:54:44Z |
J2 Sourcing | IXFN 20N120P | 20 | - | - | - | - | - | 2019-12-13T09:52:53Z |
Hermes Engineering | IXFN20N120P | 300 | - | - | - | - | - | 2019-12-30T05:33:54Z |
USComponent | IXFN20N120P | 98 | - | - | - | - | - | 2019-08-29T20:04:45Z |
TME | IXFN20N120P | 29 | 296.11 | 235.89 | 235.89 | 235.89 | 235.89 | 2020-01-01T10:25:14Z |
Abacus Technologies | IXFN20N120P | 77 | - | - | - | - | - | 2019-12-06T00:07:36Z |
Au Ling | IXFN20N120P | Contact | - | - | - | - | - | 2019-11-27T14:34:02Z |
Sierra IC | IXFN20N120P | Contact | - | - | - | - | - | 2019-12-16T00:48:56Z |
North Star Micro | IXFN20N120P | Contact | - | - | - | - | - | 2015-05-20T05:52:12Z |
AD5242BRUZ1M distributor
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- IXFN20N120P MOSFET. Datasheet pdf. Equivalent
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Alternate Names
IXYS has several brands around the world that may have alternate names for IXFN20N120P due to regional differences or acquisition. IXFN20N120P may also be known as the following names:
- IXYS CORPORATION
- IXY
- IXYS CORP
- IXYS SEMICONDUCTOR
- IXYS Integrated Circuits Division
- IXYS Integrated Circuits/Clare
- IXYS GMBH
- IXYS-DIRECTED ENERGY
- IXYS Integrated Circuits Division Inc
- IXYS SEMICONDUCTOR GMBH
- IXYS (VA)
- IXYS CORPO
- IXYS Semiconducter GmbH
- IXYS SEMICONDUCTOR CORP
- IXYS INTEGCIRCUITS DIV(CLARE)
- IXYS Colorado (IXYS RF Division)
- IXYS SEMICOND
- IXYS Integrated Circuits
- Zilog/IXYS
- IXYSCOR
- Clare/LXYS Corporation
- IXYS-RF
- CP CLAIRE
- Clare (IXYS)
- IXYS CORPORATION|V