Mfr. #:
CGHV40320D-GP4
Description:
RF JFET Transistors GaN HEMT Die DC-4.0GHz, 320 Watt
Lifecycle:
New from this manufacturer.
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CGHV40320D-GP4 Information

GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

Specifications

Moisture Sensitive: Yes
RoHS: Y
Subcategory: Transistors
Configuration: Single Triple Drain
Mounting Style: SMD/SMT
Packaging: Reel
Product Category: RF JFET Transistors
Product Type: RF JFET Transistors
Brand: Qorvo
Manufacturer: Qorvo
Development Kit: QPD1013EVB01
Transistor Polarity: N-Channel
Application: Military Radar, Jammers,Test Instrumentation,Wideband or Narrowband Amplifiers,Land Mobile and Military Radio Communications
Transistor Type: HEMT
Technology: GaN SiC
Package / Case: DFN-6
Pd - Power Dissipation: 67 W
Maximum Drain Gate Voltage: 65 V
Gain: 21.8 dB
Output Power: 178 W
Factory Pack Quantity: 100
Id - Continuous Drain Current: 1.7 A
Operating Frequency: 1.2 GHz to 2.7 GHz
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C

CGHV40320D-GP4 Price & Stock

Cree CGHV40320D-GP4 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Mouser941-CGHV40320D50-1990.121990.121990.121990.122020-02-21T22:48:47Z

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Alternate Names

Cree has several brands around the world that may have alternate names for CGHV40320D-GP4 due to regional differences or acquisition. CGHV40320D-GP4 may also be known as the following names:

  • CREE INC
  • CREE INCORPORATED
  • CRE
  • Cree LED Lighting
  • CREE LTD
  • CREE PWR
  • DIGI-KEY/CREE
  • Cree Asia-Pacific Ltd
  • CREE ASIA PACIFIC
  • CREE INC (VA)
  • Cree Research Inc
  • Cree Microwave
  • CREE(RoHS)
  • CREE/M
  • CREE POWER
  • Cree Inc.