- Mfr. #:
- IPG20N06S4L11AATMA1
- Description:
- MOSFET N-CHANNEL_55/60V
- Lifecycle:
- New from this manufacturer.
- Delivery
- DHL / FedEx / Ups / TNT / EMS
- Payment
- T/T / Paypal / Visa / MoneyGram / Western / Union
IPG20N06S4L11AATMA1 Information
- Wireless Charging Solutions
- Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
- Inductive Wireless Charging – In-Car Charging
- Infineon Technologies Inductive Wireless Charging – In-Car Charging allows for placing devices in a designated area to charge without a wired connection. Automotive inductive wireless charging is growing in the latest generation of cars. In fact, it’s predicted that most cars will have the feature in the very near future.
Specifications
| RoHS: | Y |
|---|---|
| Package / Case: | TDSON-8 |
| Technology: | Si |
| Mounting Style: | SMD/SMT |
| Packaging: | Reel |
| Series: | OptiMOS-T2 |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Subcategory: | MOSFETs |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Brand: | Infineon Technologies |
| Manufacturer: | Infineon |
| Part # Aliases: | IPG20N06S4L-11A SP001200162 |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Pd - Power Dissipation: | 65 W |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Typical Turn-Off Delay Time: | 58 ns |
| Qg - Gate Charge: | 53 nC |
| Factory Pack Quantity: | 5000 |
| Length: | 5.9 mm |
| Width: | 5.15 mm |
| Rise Time: | 3 ns |
| Id - Continuous Drain Current: | 20 A |
| Transistor Type: | 2 N-Channel |
| Number of Channels: | 2 Channel |
| Fall Time: | 19 ns |
| Vgs - Gate-Source Voltage: | 16 V |
| Rds On - Drain-Source Resistance: | 15.8 mOhms |
| Typical Turn-On Delay Time: | 11 ns |
| Height: | 1.27 mm |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 175 C |
IPG20N06S4L11AATMA1 Price & Stock
Infineon IPG20N06S4L11AATMA1 pricing and available inventory.
| Seller | SKU | Stock | 1 | 10 | 100 | 1000 | 10000 | Updated |
|---|---|---|---|---|---|---|---|---|
| Mouser | 726-IPG20N06S4L11AAT | 4,978 | 13.86 | 11.74 | 9.41 | 6.84 | 5.89 | 2020-04-17T16:59:37Z |
| Digi-Key | IPG20N06S4L11AATMA1-ND | - | - | - | - | - | 5.59 | 2020-04-17T13:05:08Z |
| Avnet | IPG20N06S4L11AATMA1 | - | - | - | - | - | 5.68 | 2020-04-17T01:10:34Z |
| Avnet Europe | SP001200162 | - | - | - | - | - | 7.50 | 2020-04-17T07:17:45Z |
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Alternate Names
Infineon has several brands around the world that may have alternate names for IPG20N06S4L11AATMA1 due to regional differences or acquisition. IPG20N06S4L11AATMA1 may also be known as the following names:
- Infineon Technologies
- INF
- INFIN
- INFI
- INFINE
- INFINEO
- INFINION
- SIM
- INFENION
- INFIEON
- INFINEON TECH
- INFINEN
- IFT
- IFX
- INFN
- INFINEON/SIEMENS
- INFINEON TECHNO
- IR/Infineon
- INFINEON TECHNOLOGIES (ASIA
- INFINEON TECHNOLOGIE
- INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD
- INFINEON TECH ICs
- INFINEON/PBF
- INFINEON TEC
- InfineonPb