SIHH14N60E-T1-GE3 - Vishay / Siliconix

Mfr. #:
SIHH14N60E-T1-GE3
Description:
MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

SIHH14N60E-T1-GE3 Information

Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Package / Case: PowerPAK-8x8-4
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Series: E
Length: 8 mm
Width: 8 mm
Vds - Drain-Source Breakdown Voltage: 600 V
Typical Turn-Off Delay Time: 56 ns
Qg - Gate Charge: 41 nC
Vgs th - Gate-Source Threshold Voltage: 4 V
Fall Time: 31 ns
Factory Pack Quantity: 3000
Vgs - Gate-Source Voltage: 30 V
Rds On - Drain-Source Resistance: 220 mOhms
Rise Time: 21 ns
Typical Turn-On Delay Time: 16 ns
Id - Continuous Drain Current: 16 A
Pd - Power Dissipation: 147 W
Height: 1 mm
Number of Channels: 1 Channel
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SIHH14N60E-T1-GE3 Price & Stock

Vishay SIHH14N60E-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SIHH14N60E-T1-GE3CT-ND2,99024.8322.2916.8512.8312.832020-03-30T13:13:01Z
Digi-KeySIHH14N60E-T1-GE3DKR-ND2,99024.8322.2916.8512.8312.832020-03-30T13:13:01Z
Digi-KeySIHH14N60E-T1-GE3TR-ND-----11.522020-03-30T13:13:01Z
Mouser78-SIHH14N60E-T1-GE33,00025.5421.4917.6613.1913.192020-03-31T00:10:30Z
VericalSIHH14N60E-T1-GE3494-20.8216.4112.2512.222020-03-30T17:57:08Z
Arrow ElectronicsSIHH14N60E-T1-GE349423.6920.8216.4112.2512.222020-03-30T16:20:16Z
AvnetSIHH14N60E-T1-GE3-----13.222020-03-28T01:42:05Z
TTISIHH14N60E-T1-GE3------2020-03-31T06:28:14Z
Avnet EuropeSIHH14N60E-T1-GE3-----15.402020-03-30T07:38:57Z
NetroFlashSIHH14N60E-T1-GE34,676-----2020-03-18T21:11:10Z
Ameya360SIHH14N60E-T1-GE3-----15.422020-03-26T08:40:01Z
Component ElectronicsSIHH14N60E-T1-GE332327.2827.2827.2827.2827.282020-03-18T18:16:07Z

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Alternate Names

Vishay has several brands around the world that may have alternate names for SIHH14N60E-T1-GE3 due to regional differences or acquisition. SIHH14N60E-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.