BSZ22DN20NS3GATMA1 - Infineon Technologies

Mfr. #:
BSZ22DN20NS3GATMA1
Description:
MOSFET N-Ch 200V 7A TSDSON-8 OptiMOS 3
Lifecycle:
New from this manufacturer.
Delivery
DHL / FedEx / Ups / TNT / EMS
Payment
T/T / Paypal / Visa / MoneyGram / Western / Union
 
Purchase

BSZ22DN20NS3GATMA1 Information

Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Resonant Wireless Charging - Consumer Applications
Infineon Technologies Resonant Wireless Charging - Consumer Applications takes the lead in fast switching in power transfer topologies. With the best figure of merit (FOM) for gate charge times, RDS(on) and Coss they enable 6.78MHz inverter designs. Superior power MOSFET technology addresses frequency switching implementations, especially in the 30-10V areas for class D inverter designs and in the 150-250V voltage class for class E inverter designs.

Specifications

RoHS: Y
Package / Case: TSDSON-8
Configuration: Single
Technology: Si
Mounting Style: SMD/SMT
Packaging: Reel
Series: OptiMOS 3
Tradename: OptiMOS
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Type: MOSFET
Product Category: MOSFET
Brand: Infineon Technologies
Manufacturer: Infineon
Channel Mode: Enhancement
Part # Aliases: BSZ22DN20NS3 BSZ22DN2NS3GXT G SP000781794
Id - Continuous Drain Current: 7 A
Typical Turn-Off Delay Time: 6 ns
Factory Pack Quantity: 5000
Qg - Gate Charge: 5.6 nC
Typical Turn-On Delay Time: 4 ns
Rise Time: 4 ns
Pd - Power Dissipation: 34 W
Forward Transconductance - Min: 3.5 S
Length: 3.3 mm
Width: 3.3 mm
Fall Time: 3 ns
Vds - Drain-Source Breakdown Voltage: 200 V
Vgs - Gate-Source Voltage: 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Rds On - Drain-Source Resistance: 194 mOhms
Height: 1.1 mm
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Unit Weight: 0.001277 oz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

BSZ22DN20NS3GATMA1 Price & Stock

Infineon BSZ22DN20NS3GATMA1 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3BSZ22DN20NS3GATMA1CT-ND8,7097.566.764.813.323.322019-12-15T13:49:08Z
Digi-KeyBSZ22DN20NS3GATMA1DKR-ND8,7097.566.764.813.323.322019-12-15T13:49:08Z
Digi-KeyBSZ22DN20NS3GATMA1TR-ND-----2.762019-12-15T13:49:08Z
Rochester Electronics 2BSZ22DN20NS3GATMA135,0003.273.272.962.652.652019-12-14T09:50:16Z
Rochester ElectronicsBSZ22DN20NS3G1,7003.663.663.272.962.962019-12-14T09:50:16Z
Mouser726-BSZ22DN20NS3GATM6,1337.246.234.793.342.852019-12-13T13:20:03Z
Chip One Stop JapanC1S32200041109230-6.986.986.986.982019-12-16T11:56:43Z
Arrow Electronics 2BSZ22DN20NS3GATMA14,6505.775.164.233.143.142019-12-15T16:01:15Z
Arrow ElectronicsBSZ22DN20NS3GATMA16646.625.804.584.014.012019-12-15T16:01:15Z
Verical 3BSZ22DN20NS3GATMA14,640--4.313.012.572019-12-15T17:43:44Z
VericalBSZ22DN20NS3GATMA1664--4.584.014.012019-12-15T17:43:44Z
VericalBSZ22DN20NS3GATMA13,540--6.075.755.752019-12-15T17:43:44Z
element14 APAC 22443374-8.136.995.383.753.202019-12-14T02:38:11Z
element14 APAC2443374RL--6.995.383.753.202019-12-14T02:38:11Z
Avnet 2BSZ22DN20NS3G----3.142.872019-12-14T01:48:28Z
AvnetBSZ22DN20NS3GATMA1-----3.092019-12-14T01:48:28Z
RS Components 39064463---5.784.294.292019-12-15T11:56:45Z
RS Components9064463P---5.784.294.292019-12-15T11:56:45Z
RS Components1787426-----5.202019-12-15T11:56:45Z
Farnell 22443374--7.064.844.184.072019-12-14T02:46:16Z
Farnell2443374RL--7.064.844.184.072019-12-14T02:46:16Z
Avnet EuropeSP00078179415,066----4.652019-12-16T08:04:50Z
NAC SemiXSKDRABS00285644,000-----2019-12-14T13:24:00Z
SourceabilityBSZ22DN20NS3G6,000-----2019-12-11T15:44:45Z
Hermes EngineeringBSZ22DN20NS3GATMA14,758-----2019-12-02T08:53:07Z
NetSource TechnologyBSZ22DN20NS3 G3,504-----2019-12-13T19:10:36Z
LTL Group612649466-----2019-12-14T06:25:25Z
GreenTree ElectronicsBSZ22DN20NS3G25,536-----2019-11-06T14:43:13Z
TMEBSZ22DN20NS3GATMA1-6.714.644.034.034.032019-12-15T11:24:03Z
Abacus TechnologiesBSZ22DN20NS3GATMA1138-----2019-12-06T00:07:36Z
North Star MicroBSZ22DN20NS3GATMA1Contact-----2015-05-20T05:52:12Z
Sierra ICBSZ22DN20NS3GATMA1Contact-----2019-09-03T21:05:22Z

AD5242BRUZ1M distributor

BSZ22DN20NS3GATMA1 Infineon Technologies - Digikey
BSZ22DN20NS3GATMA1 Infineon Technologies | Mouser
Infineon Technologies AG BSZ22DN20NS3GATMA1 MOSFETs
Apr 15, 2020
BSZ22DN20NS3 G - Infineon Technologies
Jul 14, 2011
Infineon BSZ22DN20NS3GATMA1 - MOSFETs - Octopart
BSZ22DN20NS3GATMA1 in Reel by Infineon | Mosfets
BSZ22DN20NS3GATMA1 INFINEON TECHNOLOGIES
Jun 17, 2021
BSZ22DN20NS3GATMA1 Infineon, Power MOSFET, N Channel ...
BSZ22DN20NS3GATMA1 - Infineon Technologies - OMO ...
N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon ...

Alternate Names

Infineon has several brands around the world that may have alternate names for BSZ22DN20NS3GATMA1 due to regional differences or acquisition. BSZ22DN20NS3GATMA1 may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFIN
  • INFI
  • INFINE
  • INFINEO
  • INFINION
  • SIM
  • INFENION
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFT
  • IFX
  • INFN
  • INFINEON/SIEMENS
  • INFINEON TECHNO
  • IR/Infineon
  • INFINEON TECHNOLOGIES (ASIA
  • INFINEON TECHNOLOGIE
  • INFINEON TECHNOLOGIES ASIA PACIFIC PTE LTD
  • INFINEON TECH ICs
  • INFINEON/PBF
  • INFINEON TEC
  • InfineonPb