SI7900AEDN-T1-GE3 - Vishay / Siliconix

Mfr. #:
SI7900AEDN-T1-GE3
Description:
MOSFET 20V Vds 12V Vgs PowerPAK 1212-8
Lifecycle:
New from this manufacturer.
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SI7900AEDN-T1-GE3 Information

Integrated MOSFETs with Common Drain
Vishay Integrated MOSFETs with Common Drain are 1, 2 and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 

Specifications

RoHS: Y
Brand: Vishay / Siliconix
Manufacturer: Vishay
Tradename: TrenchFET
Technology: Si
Mounting Style: SMD/SMT
Part # Aliases: SI7900AEDN-GE3
Series: SI7
Packaging: Reel
Package / Case: PowerPAK-1212-8
Transistor Polarity: N-Channel
Subcategory: MOSFETs
Product Category: MOSFET
Product Type: MOSFET
Channel Mode: Enhancement
Configuration: Dual
Typical Turn-Off Delay Time: 8.6 ns
Id - Continuous Drain Current: 8.5 A
Vgs th - Gate-Source Threshold Voltage: 400 mV
Fall Time: 4.2 ns
Factory Pack Quantity: 3000
Pd - Power Dissipation: 3.1 W
Rds On - Drain-Source Resistance: 26 mOhms
Forward Transconductance - Min: 25 S
Vds - Drain-Source Breakdown Voltage: 20 V
Transistor Type: 2 N-Channel
Number of Channels: 2 Channel
Qg - Gate Charge: 16 nC
Vgs - Gate-Source Voltage: 12 V
Rise Time: 1.3 ns
Typical Turn-On Delay Time: 0.85 ns
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C

SI7900AEDN-T1-GE3 Price & Stock

Vishay SI7900AEDN-T1-GE3 pricing and available inventory.

SellerSKUStock 1 10 100 1000 10000 Updated
Digi-Key 3SI7900AEDN-T1-GE3CT-ND68.097.205.133.543.542020-01-02T13:46:23Z
Digi-KeySI7900AEDN-T1-GE3DKR-ND68.097.205.133.543.542020-01-02T13:46:23Z
Digi-KeySI7900AEDN-T1-GE3TR-ND-----3.392020-01-02T13:46:23Z
Mouser781-SI7900AEDN-GE3108.296.825.463.843.482020-01-01T18:19:57Z
RS Components 38181416--6.546.544.023.792020-01-02T19:10:06Z
RS Components8181416P----4.023.792020-01-02T19:10:06Z
RS Components1656339-----3.752020-01-02T19:10:06Z
AvnetSI7900AEDN-T1-GE3-----3.352020-01-03T02:29:50Z
Allied Electronics & Automation70617004----4.743.852020-01-03T11:30:28Z
North Star MicroSI7900AEDN-T1-GE3Contact-----2015-05-20T05:52:12Z

AD5242BRUZ1M distributor

SI7900AEDN-T1-GE3 Vishay Semiconductors | Mouser
SI7900AEDN-T1-GE3 Vishay Siliconix - Digikey
Si7900AEDN Dual N-Channel 20 V (D-S) MOSFET ... - Vishay
SI7900AEDN-T1-GE3 by Vishay MOSFET Arrays - Avnet
Vishay SI7900AEDN-T1-GE3 MOSFET 2 N-channel 1.5 W ...
SI7900AEDN-T1-GE3 Vishay | Dual N-Channel MOSFET, 6 A ...
SI7900AEDN-T1-E3 by Vishay | MOSFETs | Arrow.com
SI7900AEDN-T1-GE3 Datasheet(PDF) - Vishay Siliconix
SI7900AEDN-T1-GE3 Notice - Vishay/Siliconix - Hotenda.com

Alternate Names

Vishay has several brands around the world that may have alternate names for SI7900AEDN-T1-GE3 due to regional differences or acquisition. SI7900AEDN-T1-GE3 may also be known as the following names:

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
  • VISHA
  • VISHAY THIN FILM
  • VISHAY INTERTECHNOLOGY
  • VISHY
  • VISAHY
  • VISH/IR
  • VSHY
  • VSH
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
  • VISHAY ELECTRONIC
  • VSHAY
  • VISHAY FOIL RESISTORS
  • VISHAY AMERICAS INC
  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY AMERICAS
  • VISHAY ELECTRO-FILMS
  • VISHAY COMPONENTS
  • Vishay Semiconductors
  • VISHAY COMPONENTS NEDERLAND
  • VISHAY INTERTEC
  • VISHAY FOIL RESISTORS / VPG
  • VISHAY OPTO
  • Vishay Intertechnology Inc.